Plasma resistant modified I-line, deep UV and E-beam resists

Plasma resistant modified I-line, deep UV and E-beam resists

This paper presents chemically modified photoresists for use as plasma etch masks over various substrates during patterning in IC manufacturing with sub-0.5 micron resolution. The modification consists of directly adding the modifying compounds into the photoresist solutions. The added compounds inc...

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Hauptverfasser: Bousaba, J.E., Tranjan, F.M., Qushair, L.E., DuBois, T.D., Bobbio, S.M., Jose, M.T., Nickel, J.L., Jones, S.K., Dudley, B.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Chemical technology
Etching
Oxygen
Plasma applications
Plasma chemistry
Plasma materials processing
Plasma properties
Polyimides
Resists
Silicon
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Zusammenfassung:This paper presents chemically modified photoresists for use as plasma etch masks over various substrates during patterning in IC manufacturing with sub-0.5 micron resolution. The modification consists of directly adding the modifying compounds into the photoresist solutions. The added compounds increase the Oxygen, Fluorine and Chlorine plasma resistance of photoresists, thus promoting a high etch rate selectivity with respect to other substrates and films (e.g. polyimide, PMGI, oxide, etc.).< >
DOI:10.1109/ECTC.1994.367592