Linewidth enhancement factor in strained quantum well lasers

Linewidth enhancement factor in strained quantum well lasers

The linewidth enhancement factor alpha of strained quantum-well lasers is analyzed by the k-p perturbation method using the effective-mass approximation. It is found that the alpha factor in a strained In/sub 0.80/Ga/sub 0.20/As/InP quantum-well (QW) laser with 1.9% biaxial compression is less than...

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Veröffentlicht in:IEEE Photonics Technol. Lett.; (United States) 1989-06, Vol.1 (6), p.117-119
Hauptverfasser: Ohtoshi, T., Chinone, N.
Format: Artikel
Sprache:eng
Schlagworte:
420300 - Engineering- Lasers- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
Chirp
Controllability
DOPED MATERIALS
Effective mass
ENGINEERING
Epitaxial layers
FREQUENCY MODULATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
Indium phosphide
INDIUM PHOSPHIDES
Laser modes
Laser theory
LASERS
LINE WIDTHS
MATERIALS
MODULATION
P-TYPE CONDUCTORS
Perturbation methods
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM ELECTRONICS
Quantum well lasers
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SOLID STATE LASERS
Threshold current
WAVELENGTHS
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Zusammenfassung:The linewidth enhancement factor alpha of strained quantum-well lasers is analyzed by the k-p perturbation method using the effective-mass approximation. It is found that the alpha factor in a strained In/sub 0.80/Ga/sub 0.20/As/InP quantum-well (QW) laser with 1.9% biaxial compression is less than 1.5. For a strained QW laser with p-type modulation doping (MD) of 5*10/sup 18/ cm/sup -3/, the alpha factor is as small as 0.8. It is also demonstrated that the spectral linewidth and wavelength chirping in the strained MD QW laser are significantly less than those in conventional bulk and QW lasers.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.36007