Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors
Bipolar transistors with phosphorus-doped emitters and sub-50 nm epitaxial bases have been fabricated in a low thermal-cycle process to explore the trade-offs between cutoff frequency, breakdown voltage and Early voltage. Record peak f/sub T/s of 73 GHz for a Si BJT and 113 GHz for a SiGe HBT with r...
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| creator | Crabbe, E.F. Meyerson, B.S. Stork, J.M.C. Harame, D.L. |
| description | Bipolar transistors with phosphorus-doped emitters and sub-50 nm epitaxial bases have been fabricated in a low thermal-cycle process to explore the trade-offs between cutoff frequency, breakdown voltage and Early voltage. Record peak f/sub T/s of 73 GHz for a Si BJT and 113 GHz for a SiGe HBT with respective /spl beta/V/sub A/ products of 630 and 48,400 V were obtained for intrinsic base sheet resistances of 26 and 7 k/spl Omega/spl square/.< > |
| doi_str_mv | 10.1109/IEDM.1993.347393 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_347393</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>347393</ieee_id><sourcerecordid>347393</sourcerecordid><originalsourceid>FETCH-LOGICAL-i87t-aa782f593b1c971334c1e05f27468eac80ff33f5d6328777d7d8e74db997115c3</originalsourceid><addsrcrecordid>eNotkL1OwzAURi1-JNrCjpj8Aim-uXFsj6iUUqmIgQqxVU5yTY3SJNgGUZ6eSmU6y3e-4TB2DWIKIMztcn7_NAVjcIqFQoMnbJSDLDMB6u2UjYXSAqGQojxjIwElZmBAX7BxjB9C5EoaOWLNK4Xka9vyIfTOt8T7Ifmd_7XJ9x3vHf-msOdb_77lLtDnF3X1ntPgk_3xB-vFZ9x2zYELyiobiVd-6FsbeAq2iz6mPsRLdu5sG-nqnxO2fpivZ4_Z6nmxnN2tMq9VyqxVOnfSYAW1UYBY1EBCulwVpSZba-EcopNNiblWSjWq0aSKpjKHNcgaJ-zmeOuJaDMEv7Nhvzm2wT8BVVeF</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Crabbe, E.F. ; Meyerson, B.S. ; Stork, J.M.C. ; Harame, D.L.</creator><creatorcontrib>Crabbe, E.F. ; Meyerson, B.S. ; Stork, J.M.C. ; Harame, D.L.</creatorcontrib><description>Bipolar transistors with phosphorus-doped emitters and sub-50 nm epitaxial bases have been fabricated in a low thermal-cycle process to explore the trade-offs between cutoff frequency, breakdown voltage and Early voltage. Record peak f/sub T/s of 73 GHz for a Si BJT and 113 GHz for a SiGe HBT with respective /spl beta/V/sub A/ products of 630 and 48,400 V were obtained for intrinsic base sheet resistances of 26 and 7 k/spl Omega/spl square/.< ></description><identifier>ISSN: 0163-1918</identifier><identifier>ISBN: 0780314506</identifier><identifier>ISBN: 9780780314504</identifier><identifier>EISSN: 2156-017X</identifier><identifier>DOI: 10.1109/IEDM.1993.347393</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Bipolar transistors ; Breakdown voltage ; Cutoff frequency ; Doping ; Germanium silicon alloys ; Heterojunction bipolar transistors ; Passivation ; Silicon germanium ; Surfaces</subject><ispartof>Proceedings of IEEE International Electron Devices Meeting, 1993, p.83-86</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/347393$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/347393$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Crabbe, E.F.</creatorcontrib><creatorcontrib>Meyerson, B.S.</creatorcontrib><creatorcontrib>Stork, J.M.C.</creatorcontrib><creatorcontrib>Harame, D.L.</creatorcontrib><title>Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors</title><title>Proceedings of IEEE International Electron Devices Meeting</title><addtitle>IEDM</addtitle><description>Bipolar transistors with phosphorus-doped emitters and sub-50 nm epitaxial bases have been fabricated in a low thermal-cycle process to explore the trade-offs between cutoff frequency, breakdown voltage and Early voltage. Record peak f/sub T/s of 73 GHz for a Si BJT and 113 GHz for a SiGe HBT with respective /spl beta/V/sub A/ products of 630 and 48,400 V were obtained for intrinsic base sheet resistances of 26 and 7 k/spl Omega/spl square/.< ></description><subject>Annealing</subject><subject>Bipolar transistors</subject><subject>Breakdown voltage</subject><subject>Cutoff frequency</subject><subject>Doping</subject><subject>Germanium silicon alloys</subject><subject>Heterojunction bipolar transistors</subject><subject>Passivation</subject><subject>Silicon germanium</subject><subject>Surfaces</subject><issn>0163-1918</issn><issn>2156-017X</issn><isbn>0780314506</isbn><isbn>9780780314504</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1993</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkL1OwzAURi1-JNrCjpj8Aim-uXFsj6iUUqmIgQqxVU5yTY3SJNgGUZ6eSmU6y3e-4TB2DWIKIMztcn7_NAVjcIqFQoMnbJSDLDMB6u2UjYXSAqGQojxjIwElZmBAX7BxjB9C5EoaOWLNK4Xka9vyIfTOt8T7Ifmd_7XJ9x3vHf-msOdb_77lLtDnF3X1ntPgk_3xB-vFZ9x2zYELyiobiVd-6FsbeAq2iz6mPsRLdu5sG-nqnxO2fpivZ4_Z6nmxnN2tMq9VyqxVOnfSYAW1UYBY1EBCulwVpSZba-EcopNNiblWSjWq0aSKpjKHNcgaJ-zmeOuJaDMEv7Nhvzm2wT8BVVeF</recordid><startdate>1993</startdate><enddate>1993</enddate><creator>Crabbe, E.F.</creator><creator>Meyerson, B.S.</creator><creator>Stork, J.M.C.</creator><creator>Harame, D.L.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1993</creationdate><title>Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors</title><author>Crabbe, E.F. ; Meyerson, B.S. ; Stork, J.M.C. ; Harame, D.L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i87t-aa782f593b1c971334c1e05f27468eac80ff33f5d6328777d7d8e74db997115c3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Annealing</topic><topic>Bipolar transistors</topic><topic>Breakdown voltage</topic><topic>Cutoff frequency</topic><topic>Doping</topic><topic>Germanium silicon alloys</topic><topic>Heterojunction bipolar transistors</topic><topic>Passivation</topic><topic>Silicon germanium</topic><topic>Surfaces</topic><toplevel>online_resources</toplevel><creatorcontrib>Crabbe, E.F.</creatorcontrib><creatorcontrib>Meyerson, B.S.</creatorcontrib><creatorcontrib>Stork, J.M.C.</creatorcontrib><creatorcontrib>Harame, D.L.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Crabbe, E.F.</au><au>Meyerson, B.S.</au><au>Stork, J.M.C.</au><au>Harame, D.L.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors</atitle><btitle>Proceedings of IEEE International Electron Devices Meeting</btitle><stitle>IEDM</stitle><date>1993</date><risdate>1993</risdate><spage>83</spage><epage>86</epage><pages>83-86</pages><issn>0163-1918</issn><eissn>2156-017X</eissn><isbn>0780314506</isbn><isbn>9780780314504</isbn><abstract>Bipolar transistors with phosphorus-doped emitters and sub-50 nm epitaxial bases have been fabricated in a low thermal-cycle process to explore the trade-offs between cutoff frequency, breakdown voltage and Early voltage. Record peak f/sub T/s of 73 GHz for a Si BJT and 113 GHz for a SiGe HBT with respective /spl beta/V/sub A/ products of 630 and 48,400 V were obtained for intrinsic base sheet resistances of 26 and 7 k/spl Omega/spl square/.< ></abstract><pub>IEEE</pub><doi>10.1109/IEDM.1993.347393</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0163-1918 |
| ispartof | Proceedings of IEEE International Electron Devices Meeting, 1993, p.83-86 |
| issn | 0163-1918 2156-017X |
| language | eng |
| recordid | cdi_ieee_primary_347393 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing Bipolar transistors Breakdown voltage Cutoff frequency Doping Germanium silicon alloys Heterojunction bipolar transistors Passivation Silicon germanium Surfaces |
| title | Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T08%3A59%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Vertical%20profile%20optimization%20of%20very%20high%20frequency%20epitaxial%20Si-%20and%20SiGe-base%20bipolar%20transistors&rft.btitle=Proceedings%20of%20IEEE%20International%20Electron%20Devices%20Meeting&rft.au=Crabbe,%20E.F.&rft.date=1993&rft.spage=83&rft.epage=86&rft.pages=83-86&rft.issn=0163-1918&rft.eissn=2156-017X&rft.isbn=0780314506&rft.isbn_list=9780780314504&rft_id=info:doi/10.1109/IEDM.1993.347393&rft_dat=%3Cieee_6IE%3E347393%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=347393&rfr_iscdi=true |