Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors

Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors

Bipolar transistors with phosphorus-doped emitters and sub-50 nm epitaxial bases have been fabricated in a low thermal-cycle process to explore the trade-offs between cutoff frequency, breakdown voltage and Early voltage. Record peak f/sub T/s of 73 GHz for a Si BJT and 113 GHz for a SiGe HBT with r...

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Hauptverfasser: Crabbe, E.F., Meyerson, B.S., Stork, J.M.C., Harame, D.L.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Bipolar transistors
Breakdown voltage
Cutoff frequency
Doping
Germanium silicon alloys
Heterojunction bipolar transistors
Passivation
Silicon germanium
Surfaces
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Zusammenfassung:Bipolar transistors with phosphorus-doped emitters and sub-50 nm epitaxial bases have been fabricated in a low thermal-cycle process to explore the trade-offs between cutoff frequency, breakdown voltage and Early voltage. Record peak f/sub T/s of 73 GHz for a Si BJT and 113 GHz for a SiGe HBT with respective /spl beta/V/sub A/ products of 630 and 48,400 V were obtained for intrinsic base sheet resistances of 26 and 7 k/spl Omega/spl square/.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1993.347393