Thin film CuInGaSe/sub 2/ cell development

Thin film CuInGaSe/sub 2/ cell development

The characteristics of polycrystalline, thin film CuIn/sub 1-X/Ga/sub X/Se/sub 2/ (CIGS)/ZnO solar cells with a total area efficiency of 13.7% are reported. These nominally 1 cm/sup 2/ cells are prepared by elemental coevaporation of the selenide material, chemical deposition of a thin (20-30 nm) Cd...

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Bibliographische Detailangaben
Hauptverfasser: Chen, W.S., Stewart, J.M., Devaney, W.E., Mickelsen, R.A., Stanbery, B.J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Chemical elements
Conducting materials
Conductive films
Magnetic materials
Optical films
Photovoltaic cells
Radio frequency
Sputtering
Transistors
Zinc oxide
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Zusammenfassung:The characteristics of polycrystalline, thin film CuIn/sub 1-X/Ga/sub X/Se/sub 2/ (CIGS)/ZnO solar cells with a total area efficiency of 13.7% are reported. These nominally 1 cm/sup 2/ cells are prepared by elemental coevaporation of the selenide material, chemical deposition of a thin (20-30 nm) CdZnS layer and RF magnetron sputtering of the ZnO transparent conductive film. The Ga and Zn contents were measured to be 26% and 20%, respectively. The authors attribute the improved performance over their previous CIGS cells to a slightly higher Ga concentration and to the preparation of ZnO films with lower optical losses.< >
DOI:10.1109/PVSC.1993.347145