Raman, photoluminescence, and SEM studies of CdS and CdTe films grown by RF sputtering and laser physical vapor deposition

Raman, photoluminescence, and SEM studies of CdS and CdTe films grown by RF sputtering and laser physical vapor deposition

Polycrystalline films of CdS, CdTe, as well as CdS/CdTe heterojunctions grown by RF magnetron sputtering and by pulsed laser physical vapor deposition are studied using the techniques of SEM, photoluminescence (PL), and Raman scattering. By correlating grain sizes and spectral features we have been...

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Hauptverfasser: Bohn, R.G., Yuxin Li, Meilun Shao, Tabory, C.N., Zhirong Feng, Fischer, A., Compaan, A.D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Chemical vapor deposition
Heterojunctions
Laser theory
Optical films
Optical pulses
Photoluminescence
Pulsed laser deposition
Radio frequency
Raman scattering
Sputtering
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Zusammenfassung:Polycrystalline films of CdS, CdTe, as well as CdS/CdTe heterojunctions grown by RF magnetron sputtering and by pulsed laser physical vapor deposition are studied using the techniques of SEM, photoluminescence (PL), and Raman scattering. By correlating grain sizes and spectral features we have been able to optimize growth temperatures. Optical studies of the buried heterojunction and the spectral response of the cell have led to optimization of post-growth anneal times and layer thicknesses.< >
DOI:10.1109/PVSC.1993.347128