Large-area ZnO films grown by photo-MOCVD and their application to a-Si solar cells
Large-area ZnO films with high-transparency and high-conductivity were successfully grown on the 10/spl times/10 cm/sup 2/ substrates by the photo-MOCVD technique at a very low temperature of 135/spl deg/C. The films have a good uniformity in thickness, resistivity and crystallinity with a deviation...
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creator | Wenas, W.W. Yoshino, M. Tabuchi, K. Yamada, A. Konagai, M. Takahashi, K. |
description | Large-area ZnO films with high-transparency and high-conductivity were successfully grown on the 10/spl times/10 cm/sup 2/ substrates by the photo-MOCVD technique at a very low temperature of 135/spl deg/C. The films have a good uniformity in thickness, resistivity and crystallinity with a deviation level of 5%. The obtained ZnO films were applied to a-Si solar cells as a TCO and a conversion efficiency of as high as 12.0% (AM-1.5, area 3 mm/spl times/3 mm) was obtained.< > |
doi_str_mv | 10.1109/PVSC.1993.347095 |
format | Conference Proceeding |
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The films have a good uniformity in thickness, resistivity and crystallinity with a deviation level of 5%. The obtained ZnO films were applied to a-Si solar cells as a TCO and a conversion efficiency of as high as 12.0% (AM-1.5, area 3 mm/spl times/3 mm) was obtained.< ></description><identifier>ISBN: 0780312201</identifier><identifier>ISBN: 9780780312203</identifier><identifier>DOI: 10.1109/PVSC.1993.347095</identifier><language>eng</language><publisher>IEEE</publisher><subject>Conductive films ; Conductivity ; Gases ; Glass ; Light sources ; MOCVD ; Photovoltaic cells ; Plasma temperature ; Surface morphology ; Zinc oxide</subject><ispartof>Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. 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The obtained ZnO films were applied to a-Si solar cells as a TCO and a conversion efficiency of as high as 12.0% (AM-1.5, area 3 mm/spl times/3 mm) was obtained.< ></description><subject>Conductive films</subject><subject>Conductivity</subject><subject>Gases</subject><subject>Glass</subject><subject>Light sources</subject><subject>MOCVD</subject><subject>Photovoltaic cells</subject><subject>Plasma temperature</subject><subject>Surface morphology</subject><subject>Zinc oxide</subject><isbn>0780312201</isbn><isbn>9780780312203</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1993</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkM9LwzAcxQMiqHN38ZSTt9SkSdPkKPUnVCZMd_BSvk2yLdI1NemQ_fc66ru8y4cPj4fQFaMZY1Tfvq2WVca05hkXJdXFCbqgpaKc5TllZ2ie0hf9iyio1OocLWuIG0cgOsCf_QKvfbdLeBPDT4_bAx62YQzkdVGt7jH0Fo9b5yOGYei8gdGHHo8BA1l6nEIHERvXdekSna6hS27-3zP08fjwXj2TevH0Ut3VxOeUj0SVBoQpnJVKUMkMFLLkVhtouTFSgG2ZkqWzawGgjG2pgkKYUtvWMGM54zN0M3mHGL73Lo3NzqfjAuhd2Kcml7SQPD-C1xPonXPNEP0O4qGZ_uG_8P1bVg</recordid><startdate>1993</startdate><enddate>1993</enddate><creator>Wenas, W.W.</creator><creator>Yoshino, M.</creator><creator>Tabuchi, K.</creator><creator>Yamada, A.</creator><creator>Konagai, M.</creator><creator>Takahashi, K.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>1993</creationdate><title>Large-area ZnO films grown by photo-MOCVD and their application to a-Si solar cells</title><author>Wenas, W.W. ; Yoshino, M. ; Tabuchi, K. ; Yamada, A. ; Konagai, M. ; Takahashi, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i203t-87ca4c5ed684061ca5673d9cab3cc64adb1867edf4aa8cdb08a54c79dbc1cd313</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Conductive films</topic><topic>Conductivity</topic><topic>Gases</topic><topic>Glass</topic><topic>Light sources</topic><topic>MOCVD</topic><topic>Photovoltaic cells</topic><topic>Plasma temperature</topic><topic>Surface morphology</topic><topic>Zinc oxide</topic><toplevel>online_resources</toplevel><creatorcontrib>Wenas, W.W.</creatorcontrib><creatorcontrib>Yoshino, M.</creatorcontrib><creatorcontrib>Tabuchi, K.</creatorcontrib><creatorcontrib>Yamada, A.</creatorcontrib><creatorcontrib>Konagai, M.</creatorcontrib><creatorcontrib>Takahashi, K.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wenas, W.W.</au><au>Yoshino, M.</au><au>Tabuchi, K.</au><au>Yamada, A.</au><au>Konagai, M.</au><au>Takahashi, K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Large-area ZnO films grown by photo-MOCVD and their application to a-Si solar cells</atitle><btitle>Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9)</btitle><stitle>PVSC</stitle><date>1993</date><risdate>1993</risdate><spage>935</spage><epage>940</epage><pages>935-940</pages><isbn>0780312201</isbn><isbn>9780780312203</isbn><abstract>Large-area ZnO films with high-transparency and high-conductivity were successfully grown on the 10/spl times/10 cm/sup 2/ substrates by the photo-MOCVD technique at a very low temperature of 135/spl deg/C. The films have a good uniformity in thickness, resistivity and crystallinity with a deviation level of 5%. The obtained ZnO films were applied to a-Si solar cells as a TCO and a conversion efficiency of as high as 12.0% (AM-1.5, area 3 mm/spl times/3 mm) was obtained.< ></abstract><pub>IEEE</pub><doi>10.1109/PVSC.1993.347095</doi><tpages>6</tpages></addata></record> |
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ispartof | Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9), 1993, p.935-940 |
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language | eng |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Conductive films Conductivity Gases Glass Light sources MOCVD Photovoltaic cells Plasma temperature Surface morphology Zinc oxide |
title | Large-area ZnO films grown by photo-MOCVD and their application to a-Si solar cells |
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