Large-area ZnO films grown by photo-MOCVD and their application to a-Si solar cells

Large-area ZnO films grown by photo-MOCVD and their application to a-Si solar cells

Large-area ZnO films with high-transparency and high-conductivity were successfully grown on the 10/spl times/10 cm/sup 2/ substrates by the photo-MOCVD technique at a very low temperature of 135/spl deg/C. The films have a good uniformity in thickness, resistivity and crystallinity with a deviation...

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Bibliographische Detailangaben
Hauptverfasser: Wenas, W.W., Yoshino, M., Tabuchi, K., Yamada, A., Konagai, M., Takahashi, K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Conductive films
Conductivity
Gases
Glass
Light sources
MOCVD
Photovoltaic cells
Plasma temperature
Surface morphology
Zinc oxide
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Zusammenfassung:Large-area ZnO films with high-transparency and high-conductivity were successfully grown on the 10/spl times/10 cm/sup 2/ substrates by the photo-MOCVD technique at a very low temperature of 135/spl deg/C. The films have a good uniformity in thickness, resistivity and crystallinity with a deviation level of 5%. The obtained ZnO films were applied to a-Si solar cells as a TCO and a conversion efficiency of as high as 12.0% (AM-1.5, area 3 mm/spl times/3 mm) was obtained.< >
DOI:10.1109/PVSC.1993.347095