Comparative materials characterization of SOI wafers produced by competing technologies

Comparative materials characterization of SOI wafers produced by competing technologies

In this work we have used established and novel analysis techniques to compare SOI wafers produced by wafer-bonding and different thinning techniques such as chemical-mechanical thinning, plasma etching and wet etching, and by separation-by-implanted-oxygen (SIMOX). The techniques employed were opti...

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Bibliographische Detailangaben
Hauptverfasser: Feijoo, D., Mills, A.P., Kortan, A.R., Sapjeta, J.B., Hsieh, C.M., Carver, G.E.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Atom optics
Atomic force microscopy
Chemical analysis
Optical materials
Plasma applications
Plasma chemistry
Plasma materials processing
Plasma x-ray sources
Reflectivity
Wet etching
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Beschreibung
Zusammenfassung:In this work we have used established and novel analysis techniques to compare SOI wafers produced by wafer-bonding and different thinning techniques such as chemical-mechanical thinning, plasma etching and wet etching, and by separation-by-implanted-oxygen (SIMOX). The techniques employed were optical-beam-induced reflectance, positron annihilation, atomic force microscopy and X-ray diffractometry.< >
DOI:10.1109/SOI.1993.344603