Growing reliable gate oxides on thick film SOI substrates

Growing reliable gate oxides on thick film SOI substrates

One of the key elements of a reliable CMOS process is a robust, defect free gate oxide. The formation of such layers on bulk substrates is a topic that has been studied for many years and has reached an advanced state of understanding. In contrast the growth of reliable gate oxides on either thick o...

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Bibliographische Detailangaben
Hauptverfasser: Yallup, K., Creighton, O.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Breakdown voltage
CMOS process
Current measurement
Electric breakdown
MOS capacitors
Stress
Substrates
Testing
Thick films
Wafer bonding
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Beschreibung
Zusammenfassung:One of the key elements of a reliable CMOS process is a robust, defect free gate oxide. The formation of such layers on bulk substrates is a topic that has been studied for many years and has reached an advanced state of understanding. In contrast the growth of reliable gate oxides on either thick or thin film SOI substrates is considerably less well understood.This paper discusses the formation of gate oxides on thick film SOI substrates. Two topics have been covered in this study, long term reliability of the oxide and early life failure rate of the oxide.< >
DOI:10.1109/SOI.1993.344583