Gate current 1/f noise in GaAs MESFET's
Gate current 1/f has been investigated on commercial GaAs MESFETs. It is found that devices with slight differences in drain current noise can have quite a different type of I/sub g/ versus V/sub ds/ and V/sub gs/ and even greater differences in the gate current noise. The 1/f part in the spectrum o...
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| Veröffentlicht in: | IEEE transactions on electron devices 1988-07, Vol.35 (7), p.1071-1075 |
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| container_end_page | 1075 |
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| container_issue | 7 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 35 |
| creator | Vandamme, L.K.J. Rigaud, D. Peransin, J.-M. Alabedra, R. Dumas, J.-M. |
| description | Gate current 1/f has been investigated on commercial GaAs MESFETs. It is found that devices with slight differences in drain current noise can have quite a different type of I/sub g/ versus V/sub ds/ and V/sub gs/ and even greater differences in the gate current noise. The 1/f part in the spectrum of the gate current is a better diagnostic tool for characterizing the quality of the junction than the drain current noise. A model that is based on a Schottky barrier shunted by edge currents is proposed to explain the experimental results.< > |
| doi_str_mv | 10.1109/16.3366 |
| format | Article |
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It is found that devices with slight differences in drain current noise can have quite a different type of I/sub g/ versus V/sub ds/ and V/sub gs/ and even greater differences in the gate current noise. The 1/f part in the spectrum of the gate current is a better diagnostic tool for characterizing the quality of the junction than the drain current noise. A model that is based on a Schottky barrier shunted by edge currents is proposed to explain the experimental results.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.3366</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Acoustical engineering ; Applied sciences ; Chemicals ; Current measurement ; Electrodes ; Electronics ; Equivalent circuits ; Exact sciences and technology ; Gallium arsenide ; Gold ; MESFETs ; Schottky barriers ; Semiconductor electronics. Microelectronics. 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It is found that devices with slight differences in drain current noise can have quite a different type of I/sub g/ versus V/sub ds/ and V/sub gs/ and even greater differences in the gate current noise. The 1/f part in the spectrum of the gate current is a better diagnostic tool for characterizing the quality of the junction than the drain current noise. A model that is based on a Schottky barrier shunted by edge currents is proposed to explain the experimental results.< ></description><subject>Acoustical engineering</subject><subject>Applied sciences</subject><subject>Chemicals</subject><subject>Current measurement</subject><subject>Electrodes</subject><subject>Electronics</subject><subject>Equivalent circuits</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Gold</subject><subject>MESFETs</subject><subject>Schottky barriers</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Superluminescent diodes</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vandamme, L.K.J.</creatorcontrib><creatorcontrib>Rigaud, D.</creatorcontrib><creatorcontrib>Peransin, J.-M.</creatorcontrib><creatorcontrib>Alabedra, R.</creatorcontrib><creatorcontrib>Dumas, J.-M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Vandamme, L.K.J.</au><au>Rigaud, D.</au><au>Peransin, J.-M.</au><au>Alabedra, R.</au><au>Dumas, J.-M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Gate current 1/f noise in GaAs MESFET's</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1988-07-01</date><risdate>1988</risdate><volume>35</volume><issue>7</issue><spage>1071</spage><epage>1075</epage><pages>1071-1075</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Gate current 1/f has been investigated on commercial GaAs MESFETs. It is found that devices with slight differences in drain current noise can have quite a different type of I/sub g/ versus V/sub ds/ and V/sub gs/ and even greater differences in the gate current noise. The 1/f part in the spectrum of the gate current is a better diagnostic tool for characterizing the quality of the junction than the drain current noise. A model that is based on a Schottky barrier shunted by edge currents is proposed to explain the experimental results.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.3366</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1988-07, Vol.35 (7), p.1071-1075 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_ieee_primary_3366 |
| source | IEEE Electronic Library (IEL) |
| subjects | Acoustical engineering Applied sciences Chemicals Current measurement Electrodes Electronics Equivalent circuits Exact sciences and technology Gallium arsenide Gold MESFETs Schottky barriers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Superluminescent diodes Transistors |
| title | Gate current 1/f noise in GaAs MESFET's |
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