Gate current 1/f noise in GaAs MESFET's

Gate current 1/f noise in GaAs MESFET's

Gate current 1/f has been investigated on commercial GaAs MESFETs. It is found that devices with slight differences in drain current noise can have quite a different type of I/sub g/ versus V/sub ds/ and V/sub gs/ and even greater differences in the gate current noise. The 1/f part in the spectrum o...

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Veröffentlicht in:IEEE transactions on electron devices 1988-07, Vol.35 (7), p.1071-1075
Hauptverfasser: Vandamme, L.K.J., Rigaud, D., Peransin, J.-M., Alabedra, R., Dumas, J.-M.
Format: Artikel
Sprache:eng
Schlagworte:
Acoustical engineering
Applied sciences
Chemicals
Current measurement
Electrodes
Electronics
Equivalent circuits
Exact sciences and technology
Gallium arsenide
Gold
MESFETs
Schottky barriers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Superluminescent diodes
Transistors
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Zusammenfassung:Gate current 1/f has been investigated on commercial GaAs MESFETs. It is found that devices with slight differences in drain current noise can have quite a different type of I/sub g/ versus V/sub ds/ and V/sub gs/ and even greater differences in the gate current noise. The 1/f part in the spectrum of the gate current is a better diagnostic tool for characterizing the quality of the junction than the drain current noise. A model that is based on a Schottky barrier shunted by edge currents is proposed to explain the experimental results.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.3366