1 W Ku-band AlGaAs/GaAs power HBTs with 72% peak power-added efficiency

1 W Ku-band AlGaAs/GaAs power HBTs with 72% peak power-added efficiency

High power and high-efficiency multi-finger HBTs (heterojunction bipolar transistors) have been successfully realized at Ku-band by using emitter ballasting resistors and a PHS (plated heat sink) structure. An output power of 1 W with power added efficiency (PAE) of 72% at 12 GHz has been achieved f...

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Hauptverfasser: Shimura, T., Sakai, M., Inoue, A., Izumi, S., Matsuoka, H., Udomoto, J., Kosaki, K., Kuragaki, T., Hattori, R., Takano, H., Sonoda, T., Takamiya, S., Mitsui, S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electronic ballasts
Gallium arsenide
Heat sinks
Heterojunction bipolar transistors
Power generation
Resistors
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Beschreibung
Zusammenfassung:High power and high-efficiency multi-finger HBTs (heterojunction bipolar transistors) have been successfully realized at Ku-band by using emitter ballasting resistors and a PHS (plated heat sink) structure. An output power of 1 W with power added efficiency (PAE) of 72% at 12 GHz has been achieved from a ten-finger HBT with the total emitter size of 300 /spl mu/m/sup 2/. 72% PAE with the output power density of 5.0 W/mm is the best performance in the HBTs of which the output powers are more than 1 W at Ku-band.< >
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1994.335517