A high power Q-band GaAs pseudomorphic HEMT monolithic amplifier

A high power Q-band GaAs pseudomorphic HEMT monolithic amplifier

A first-pass, three stage monolithic GaAs pseudomorphic HEMT power amplifier has been developed for use over the 40 GHz to 45 GHz band. The MMIC amplifier delivers 500 to 725 mW at the one dB gain compression point. The associated power gain is 10 to 11 dB and the power added efficiency is 10 to 17%...

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Bibliographische Detailangaben
Hauptverfasser: Boulais, W., Donahue, R.S., Platzker, A., Huang, J., Aucoin, L., Shanfield, S., Vafiades, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Gain
Gallium arsenide
High power amplifiers
MMICs
Phased arrays
PHEMTs
Power amplifiers
Radar applications
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Beschreibung
Zusammenfassung:A first-pass, three stage monolithic GaAs pseudomorphic HEMT power amplifier has been developed for use over the 40 GHz to 45 GHz band. The MMIC amplifier delivers 500 to 725 mW at the one dB gain compression point. The associated power gain is 10 to 11 dB and the power added efficiency is 10 to 17%. Potential applications for this work include communication systems and phased array radars.< >
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1994.335507