A monolithic 2-52 GHz HEMT matrix distributed amplifier in coplanar waveguide technology

A monolithic 2-52 GHz HEMT matrix distributed amplifier in coplanar waveguide technology

This paper discusses design, performance and fabrication of a two stages four sections GaAs monolithic matrix distributed amplifier covering the frequency range from 2 to 52 GHz. The achieved gain is about 9 dB and the return loss is better than 12 dB. The devices we used are 2/spl times/25 /spl mu/...

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Hauptverfasser: Heilig, R., Hollmann, D., Baumann, G.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Broadband amplifiers
Coplanar waveguides
Distributed amplifiers
Fabrication
Frequency
Gallium arsenide
HEMTs
Transmission line matrix methods
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Beschreibung
Zusammenfassung:This paper discusses design, performance and fabrication of a two stages four sections GaAs monolithic matrix distributed amplifier covering the frequency range from 2 to 52 GHz. The achieved gain is about 9 dB and the return loss is better than 12 dB. The devices we used are 2/spl times/25 /spl mu/m, 0.2 /spl mu/m recessed gate AlGaAs HEMTs and the coplanar waveguide was the propagation medium for this broadband amplifier. The chip dimensions of the amplifier including the bias networks are 2.0 mm/spl times/2.5 mm.< >
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1994.335432