Design of W-band monolithic low noise amplifiers using accurate HEMT modeling
A W-band monolithic two-stage low noise amplifiers have been developed using new accurate HEMT modeling. The modeling includes intrinsic FET noise parameters that are independent of frequency. A noise figure of 5.5 dB with an associated gain of 8.7 dB is achieved at 91 GHz when biased for low noise...
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| container_end_page | 292 vol.1 |
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| creator | Kashiwa, T. Tanino, N. Minami, H. Katoh, T. Yoshida, N. Itoh, Y. Mitsui, Y. Imatani, T. Mitsui, S. |
| description | A W-band monolithic two-stage low noise amplifiers have been developed using new accurate HEMT modeling. The modeling includes intrinsic FET noise parameters that are independent of frequency. A noise figure of 5.5 dB with an associated gain of 8.7 dB is achieved at 91 GHz when biased for low noise figure, and a small signal gain of 10.4 dB with noise figure of 5.9 dB is obtained when biased for high gain. Good agreement between measured and simulated data of the low noise amplifier verifies the HEMT modeling.< > |
| doi_str_mv | 10.1109/MWSYM.1994.335314 |
| format | Conference Proceeding |
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The modeling includes intrinsic FET noise parameters that are independent of frequency. A noise figure of 5.5 dB with an associated gain of 8.7 dB is achieved at 91 GHz when biased for low noise figure, and a small signal gain of 10.4 dB with noise figure of 5.9 dB is obtained when biased for high gain. Good agreement between measured and simulated data of the low noise amplifier verifies the HEMT modeling.< ></description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 0780317785</identifier><identifier>ISBN: 9780780317789</identifier><identifier>EISSN: 2576-7216</identifier><identifier>DOI: 10.1109/MWSYM.1994.335314</identifier><language>eng</language><publisher>IEEE</publisher><subject>FETs ; Frequency ; Gain ; HEMTs ; Low-noise amplifiers ; Noise figure ; Noise measurement</subject><ispartof>1994 IEEE MTT-S International Microwave Symposium Digest (Cat. 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Good agreement between measured and simulated data of the low noise amplifier verifies the HEMT modeling.< ></description><subject>FETs</subject><subject>Frequency</subject><subject>Gain</subject><subject>HEMTs</subject><subject>Low-noise amplifiers</subject><subject>Noise figure</subject><subject>Noise measurement</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>0780317785</isbn><isbn>9780780317789</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1994</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkMtKw0AYhQcvYFp9AF3NCyT-k7kvpVYrNLiwUl2VyVzqSC4lkyK-vYG6OnDgO3wchG4JFISAvq-2b59VQbRmBaWcEnaGspJLkcuSiHM0A6mAEikVv0AZEKZzwfjHFZql9A0AXBGRoerRp7jvcB_wNq9N53Dbd30Tx69ocdP_4K6PyWPTHpoYoh8SPqbY7bGx9jiY0ePVstpMjPPNVF-jy2Ca5G_-c47en5abxSpfvz6_LB7WeSSyHHOmOOhgpOSThrDSWO6YhqACaJCBl8J7yYgwFmxJtdKcgpOudspDSV1N5-jutBu997vDEFsz_O5OL9A_ZxNOqQ</recordid><startdate>1994</startdate><enddate>1994</enddate><creator>Kashiwa, T.</creator><creator>Tanino, N.</creator><creator>Minami, H.</creator><creator>Katoh, T.</creator><creator>Yoshida, N.</creator><creator>Itoh, Y.</creator><creator>Mitsui, Y.</creator><creator>Imatani, T.</creator><creator>Mitsui, S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1994</creationdate><title>Design of W-band monolithic low noise amplifiers using accurate HEMT modeling</title><author>Kashiwa, T. ; Tanino, N. ; Minami, H. ; Katoh, T. ; Yoshida, N. ; Itoh, Y. ; Mitsui, Y. ; Imatani, T. ; Mitsui, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-48509fa7750056c7ac5d490f8f0907f526ee7416ac0c23989530d7dbd8e023db3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1994</creationdate><topic>FETs</topic><topic>Frequency</topic><topic>Gain</topic><topic>HEMTs</topic><topic>Low-noise amplifiers</topic><topic>Noise figure</topic><topic>Noise measurement</topic><toplevel>online_resources</toplevel><creatorcontrib>Kashiwa, T.</creatorcontrib><creatorcontrib>Tanino, N.</creatorcontrib><creatorcontrib>Minami, H.</creatorcontrib><creatorcontrib>Katoh, T.</creatorcontrib><creatorcontrib>Yoshida, N.</creatorcontrib><creatorcontrib>Itoh, Y.</creatorcontrib><creatorcontrib>Mitsui, Y.</creatorcontrib><creatorcontrib>Imatani, T.</creatorcontrib><creatorcontrib>Mitsui, S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library Online</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kashiwa, T.</au><au>Tanino, N.</au><au>Minami, H.</au><au>Katoh, T.</au><au>Yoshida, N.</au><au>Itoh, Y.</au><au>Mitsui, Y.</au><au>Imatani, T.</au><au>Mitsui, S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Design of W-band monolithic low noise amplifiers using accurate HEMT modeling</atitle><btitle>1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4)</btitle><stitle>MWSYM</stitle><date>1994</date><risdate>1994</risdate><spage>289</spage><epage>292 vol.1</epage><pages>289-292 vol.1</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><isbn>0780317785</isbn><isbn>9780780317789</isbn><abstract>A W-band monolithic two-stage low noise amplifiers have been developed using new accurate HEMT modeling. The modeling includes intrinsic FET noise parameters that are independent of frequency. A noise figure of 5.5 dB with an associated gain of 8.7 dB is achieved at 91 GHz when biased for low noise figure, and a small signal gain of 10.4 dB with noise figure of 5.9 dB is obtained when biased for high gain. Good agreement between measured and simulated data of the low noise amplifier verifies the HEMT modeling.< ></abstract><pub>IEEE</pub><doi>10.1109/MWSYM.1994.335314</doi></addata></record> |
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| identifier | ISSN: 0149-645X |
| ispartof | 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4), 1994, p.289-292 vol.1 |
| issn | 0149-645X 2576-7216 |
| language | eng |
| recordid | cdi_ieee_primary_335314 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | FETs Frequency Gain HEMTs Low-noise amplifiers Noise figure Noise measurement |
| title | Design of W-band monolithic low noise amplifiers using accurate HEMT modeling |
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