Design of W-band monolithic low noise amplifiers using accurate HEMT modeling

Design of W-band monolithic low noise amplifiers using accurate HEMT modeling

A W-band monolithic two-stage low noise amplifiers have been developed using new accurate HEMT modeling. The modeling includes intrinsic FET noise parameters that are independent of frequency. A noise figure of 5.5 dB with an associated gain of 8.7 dB is achieved at 91 GHz when biased for low noise...

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Hauptverfasser: Kashiwa, T., Tanino, N., Minami, H., Katoh, T., Yoshida, N., Itoh, Y., Mitsui, Y., Imatani, T., Mitsui, S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
FETs
Frequency
Gain
HEMTs
Low-noise amplifiers
Noise figure
Noise measurement
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Zusammenfassung:A W-band monolithic two-stage low noise amplifiers have been developed using new accurate HEMT modeling. The modeling includes intrinsic FET noise parameters that are independent of frequency. A noise figure of 5.5 dB with an associated gain of 8.7 dB is achieved at 91 GHz when biased for low noise figure, and a small signal gain of 10.4 dB with noise figure of 5.9 dB is obtained when biased for high gain. Good agreement between measured and simulated data of the low noise amplifier verifies the HEMT modeling.< >
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1994.335314