Frequency tripler with integrated back-to-back barrier-n-n/sup +/ (bbBNN) varactor diodes in a novel split-waveguide block at 220 GHz
A frequency tripler has been developed using an integrated planar back-to-back barrier-n-n/sup +/ (bbBNN) varactor device in a waveguide mount at 220 GHz. The multiplier is based on a novel split-waveguide block design and a new fully integrated planar device architecture. Planar GaAs bbBNN devices...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | A frequency tripler has been developed using an integrated planar back-to-back barrier-n-n/sup +/ (bbBNN) varactor device in a waveguide mount at 220 GHz. The multiplier is based on a novel split-waveguide block design and a new fully integrated planar device architecture. Planar GaAs bbBNN devices have been combined with quartz microstrip filters in a wafer level circuit integration process. A flange-to-flange tripling efficiency of 5%, the highest yet reported from a bbBNN structure at this frequency, has been obtained. Details of the device fabrication process, block design and measured performance are presented.< > |
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ISSN: | 0149-645X 2576-7216 |
DOI: | 10.1109/MWSYM.1994.335242 |