Frequency tripler with integrated back-to-back barrier-n-n/sup +/ (bbBNN) varactor diodes in a novel split-waveguide block at 220 GHz

A frequency tripler has been developed using an integrated planar back-to-back barrier-n-n/sup +/ (bbBNN) varactor device in a waveguide mount at 220 GHz. The multiplier is based on a novel split-waveguide block design and a new fully integrated planar device architecture. Planar GaAs bbBNN devices...

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Hauptverfasser: Choudhury, D., Raisanen, A.V., Smith, R.P., Martin, S.C., Oswald, J.E., Dengler, R.J., Frerking, M.A., Siegel, P.H.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:A frequency tripler has been developed using an integrated planar back-to-back barrier-n-n/sup +/ (bbBNN) varactor device in a waveguide mount at 220 GHz. The multiplier is based on a novel split-waveguide block design and a new fully integrated planar device architecture. Planar GaAs bbBNN devices have been combined with quartz microstrip filters in a wafer level circuit integration process. A flange-to-flange tripling efficiency of 5%, the highest yet reported from a bbBNN structure at this frequency, has been obtained. Details of the device fabrication process, block design and measured performance are presented.< >
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1994.335242