Device parameter changes caused by manufacturing fluctuations of deep submicron MOSFET's

Device parameter changes caused by manufacturing fluctuations of deep submicron MOSFET's

The effects of typical manufacturing fluctuations upon four electrical device parameters: threshold voltage, transconductance, substrate current and off current have been studied for deep submicron MOSFET's (0.1 /spl mu/m). The analysis reveals that the electrical parameter sensitivity in deep...

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Veröffentlicht in:IEEE transactions on electron devices 1994-11, Vol.41 (11), p.2210-2215
Hauptverfasser: Sitte, R., Dimitrijev, S., Harrison, H.B.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Applied sciences
Boron
Circuit simulation
Electronics
Exact sciences and technology
Fluctuations
Implants
Manufacturing
MOSFET circuits
Semiconductor device manufacture
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Substrates
Threshold voltage
Transistors
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Zusammenfassung:The effects of typical manufacturing fluctuations upon four electrical device parameters: threshold voltage, transconductance, substrate current and off current have been studied for deep submicron MOSFET's (0.1 /spl mu/m). The analysis reveals that the electrical parameter sensitivity in deep submicron devices differs from micron size devices, making a revision of the validity of conventional semiconductor manufacturing heuristics for future technology mandatory.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.333843