All-binary InAs/GaAs optical waveguide phase modulator at 1.06 μm
We demonstrate the use of multiple [(InAs) (GaAs)]/GaAs short-period strained-layer superlattice quantum wells for optical waveguide modulation at 1.06 μm. We achieve /spl pi/ phase modulation with 2.3 V applied (V/sub /spl pi//×L=4.6 V mm, or 39/spl deg//V mm) in the presence of negligible absorpti...
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| Veröffentlicht in: | IEEE photonics technology letters 1994-10, Vol.6 (10), p.1210-1212 |
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| container_end_page | 1212 |
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| container_issue | 10 |
| container_start_page | 1210 |
| container_title | IEEE photonics technology letters |
| container_volume | 6 |
| creator | Hasenberg, T.C. Koehler, S.D. Yap, D. Kost, A. Garmire, E.M. |
| description | We demonstrate the use of multiple [(InAs) (GaAs)]/GaAs short-period strained-layer superlattice quantum wells for optical waveguide modulation at 1.06 μm. We achieve /spl pi/ phase modulation with 2.3 V applied (V/sub /spl pi//×L=4.6 V mm, or 39/spl deg//V mm) in the presence of negligible absorption change using this all-binary modulator. |
| doi_str_mv | 10.1109/68.329641 |
| format | Article |
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We achieve /spl pi/ phase modulation with 2.3 V applied (V/sub /spl pi//×L=4.6 V mm, or 39/spl deg//V mm) in the presence of negligible absorption change using this all-binary modulator.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/68.329641</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Absorption ; Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; Gallium arsenide ; Optical elements, devices, and systems ; Optical modulation ; Optical processors, correlators, and modulators ; Optical refraction ; Optical sensors ; Optical superlattices ; Optical waveguides ; Optics ; Phase measurement ; Phase modulation ; Physics ; Waveguide transitions</subject><ispartof>IEEE photonics technology letters, 1994-10, Vol.6 (10), p.1210-1212</ispartof><rights>1995 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/329641$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/329641$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3380400$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Hasenberg, T.C.</creatorcontrib><creatorcontrib>Koehler, S.D.</creatorcontrib><creatorcontrib>Yap, D.</creatorcontrib><creatorcontrib>Kost, A.</creatorcontrib><creatorcontrib>Garmire, E.M.</creatorcontrib><title>All-binary InAs/GaAs optical waveguide phase modulator at 1.06 μm</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>We demonstrate the use of multiple [(InAs) (GaAs)]/GaAs short-period strained-layer superlattice quantum wells for optical waveguide modulation at 1.06 μm. We achieve /spl pi/ phase modulation with 2.3 V applied (V/sub /spl pi//×L=4.6 V mm, or 39/spl deg//V mm) in the presence of negligible absorption change using this all-binary modulator.</description><subject>Absorption</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Gallium arsenide</subject><subject>Optical elements, devices, and systems</subject><subject>Optical modulation</subject><subject>Optical processors, correlators, and modulators</subject><subject>Optical refraction</subject><subject>Optical sensors</subject><subject>Optical superlattices</subject><subject>Optical waveguides</subject><subject>Optics</subject><subject>Phase measurement</subject><subject>Phase modulation</subject><subject>Physics</subject><subject>Waveguide transitions</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNpFkM1Kw0AUhQdRsFYXbl3Nwm3Se-cv6TIWWwsFN7ouN5kZHckfmVTx3XwGn8lgBVfnwPk4HA5j1wgpIiwXJk-lWBqFJ2yGS4UJYKZOJw-TR5T6nF3E-AaASks1Y3dFXSdlaGn45Nu2iIsNFZF3_RgqqvkHvbuXQ7CO968UHW86e6hp7AZOI8cUDP_-ai7Zmac6uqs_nbPn9f3T6iHZPW62q2KXBEQzJuScFbn2pSpFZhVkILUQoqp8aa0UpUYP6MB6o9EqkQlBkBsqcxJAmdFyzm6PvT3FaZwfqK1C3PdDaKb1eylzUAATdnPEgnPuP_09Rf4AjyZStA</recordid><startdate>199410</startdate><enddate>199410</enddate><creator>Hasenberg, T.C.</creator><creator>Koehler, S.D.</creator><creator>Yap, D.</creator><creator>Kost, A.</creator><creator>Garmire, E.M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope></search><sort><creationdate>199410</creationdate><title>All-binary InAs/GaAs optical waveguide phase modulator at 1.06 μm</title><author>Hasenberg, T.C. ; Koehler, S.D. ; Yap, D. ; Kost, A. ; Garmire, E.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i116t-aeed285fb4b27d407035222ccfbdd32b51f01e0df651d42722a086ab8a20a7653</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Absorption</topic><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Gallium arsenide</topic><topic>Optical elements, devices, and systems</topic><topic>Optical modulation</topic><topic>Optical processors, correlators, and modulators</topic><topic>Optical refraction</topic><topic>Optical sensors</topic><topic>Optical superlattices</topic><topic>Optical waveguides</topic><topic>Optics</topic><topic>Phase measurement</topic><topic>Phase modulation</topic><topic>Physics</topic><topic>Waveguide transitions</topic><toplevel>online_resources</toplevel><creatorcontrib>Hasenberg, T.C.</creatorcontrib><creatorcontrib>Koehler, S.D.</creatorcontrib><creatorcontrib>Yap, D.</creatorcontrib><creatorcontrib>Kost, A.</creatorcontrib><creatorcontrib>Garmire, E.M.</creatorcontrib><collection>Pascal-Francis</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hasenberg, T.C.</au><au>Koehler, S.D.</au><au>Yap, D.</au><au>Kost, A.</au><au>Garmire, E.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>All-binary InAs/GaAs optical waveguide phase modulator at 1.06 μm</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>1994-10</date><risdate>1994</risdate><volume>6</volume><issue>10</issue><spage>1210</spage><epage>1212</epage><pages>1210-1212</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>We demonstrate the use of multiple [(InAs) (GaAs)]/GaAs short-period strained-layer superlattice quantum wells for optical waveguide modulation at 1.06 μm. We achieve /spl pi/ phase modulation with 2.3 V applied (V/sub /spl pi//×L=4.6 V mm, or 39/spl deg//V mm) in the presence of negligible absorption change using this all-binary modulator.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/68.329641</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 1041-1135 |
| ispartof | IEEE photonics technology letters, 1994-10, Vol.6 (10), p.1210-1212 |
| issn | 1041-1135 1941-0174 |
| language | eng |
| recordid | cdi_ieee_primary_329641 |
| source | IEEE Xplore (Online service) |
| subjects | Absorption Exact sciences and technology Fundamental areas of phenomenology (including applications) Gallium arsenide Optical elements, devices, and systems Optical modulation Optical processors, correlators, and modulators Optical refraction Optical sensors Optical superlattices Optical waveguides Optics Phase measurement Phase modulation Physics Waveguide transitions |
| title | All-binary InAs/GaAs optical waveguide phase modulator at 1.06 μm |
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