All-binary InAs/GaAs optical waveguide phase modulator at 1.06 μm

We demonstrate the use of multiple [(InAs) (GaAs)]/GaAs short-period strained-layer superlattice quantum wells for optical waveguide modulation at 1.06 μm. We achieve /spl pi/ phase modulation with 2.3 V applied (V/sub /spl pi//×L=4.6 V mm, or 39/spl deg//V mm) in the presence of negligible absorpti...

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Veröffentlicht in:	IEEE photonics technology letters 1994-10, Vol.6 (10), p.1210-1212
Hauptverfasser:	Hasenberg, T.C., Koehler, S.D., Yap, D., Kost, A., Garmire, E.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption Exact sciences and technology Fundamental areas of phenomenology (including applications) Gallium arsenide Optical elements, devices, and systems Optical modulation Optical processors, correlators, and modulators Optical refraction Optical sensors Optical superlattices Optical waveguides Optics Phase measurement Phase modulation Physics Waveguide transitions
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Beschreibung
Zusammenfassung:	We demonstrate the use of multiple [(InAs) (GaAs)]/GaAs short-period strained-layer superlattice quantum wells for optical waveguide modulation at 1.06 μm. We achieve /spl pi/ phase modulation with 2.3 V applied (V/sub /spl pi//×L=4.6 V mm, or 39/spl deg//V mm) in the presence of negligible absorption change using this all-binary modulator.
ISSN:	1041-1135 1941-0174
DOI:	10.1109/68.329641