Strong field theory of low loss optical switching and three-wave mixing in a semiconductor quantum well

A density matrix analysis based on radiative renormalization predicts significant changes in band-edge absorption, index of refraction, and three-wave-mixing susceptibility in a quantum well when two conduction subbands are strongly coupled by an electromagnetic field.< >

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE journal of quantum electronics 1994-10, Vol.30 (10), p.2297-2303
Hauptverfasser:	Harshman, P.J., Gustafson, T.K., Kelley, P.L., Blum, O.
Format:	Artikel
Sprache:	eng
Schlagworte:	360606 - Other Materials- Physical Properties- (1992-) 426000 - Engineering- Components, Electron Devices & Circuits- (1990-) Absorption Atom optics CALCULATION METHODS ELECTRICAL EQUIPMENT ENGINEERING Exact sciences and technology FREQUENCY MIXING Fundamental areas of phenomenology (including applications) MATERIALS MATERIALS SCIENCE Nonlinear optics Optical computers, logic elements, interconnects, switches neural networks Optical elements, devices, and systems Optical losses Optical mixing OPTICAL PROPERTIES Optical refraction Optical variables control Optics Phase conjugation, optical mixing, and photorefractive effect Phase conjugation, optical mixing photorefractive and kerr effects PHYSICAL PROPERTIES Physics Quantum mechanics Resonance SEMICONDUCTOR DEVICES SEMICONDUCTOR MATERIALS SEMICONDUCTOR SWITCHES Stark effect SWITCHES
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Beschreibung
Zusammenfassung:	A density matrix analysis based on radiative renormalization predicts significant changes in band-edge absorption, index of refraction, and three-wave-mixing susceptibility in a quantum well when two conduction subbands are strongly coupled by an electromagnetic field.< >
ISSN:	0018-9197 1558-1713
DOI:	10.1109/3.328595