InP islands on GaAs substrates: MOCVD growth of quantum-sized structures

The growth of InP on InGaP/GaAs(001) by metalorganic chemical vapor deposition (MOCVD) has been studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), and photoluminescence (PL). Islands with irregular dimensions on the growth surface but with uniform height are observed a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Reaves, C.M., Bressler-Hill, V., Krishnamurthy, M., Varma, S., Petroff, P.M., Weinberg, W.H., DenBaars, S.P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Atomic force microscopy Epitaxial growth Gallium arsenide Indium phosphide Maximum likelihood estimation MOCVD Photoluminescence Substrates Surface morphology Transmission electron microscopy
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!