InP islands on GaAs substrates: MOCVD growth of quantum-sized structures

InP islands on GaAs substrates: MOCVD growth of quantum-sized structures

The growth of InP on InGaP/GaAs(001) by metalorganic chemical vapor deposition (MOCVD) has been studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), and photoluminescence (PL). Islands with irregular dimensions on the growth surface but with uniform height are observed a...

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Hauptverfasser: Reaves, C.M., Bressler-Hill, V., Krishnamurthy, M., Varma, S., Petroff, P.M., Weinberg, W.H., DenBaars, S.P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Atomic force microscopy
Epitaxial growth
Gallium arsenide
Indium phosphide
Maximum likelihood estimation
MOCVD
Photoluminescence
Substrates
Surface morphology
Transmission electron microscopy
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Zusammenfassung:The growth of InP on InGaP/GaAs(001) by metalorganic chemical vapor deposition (MOCVD) has been studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), and photoluminescence (PL). Islands with irregular dimensions on the growth surface but with uniform height are observed at low coverages. With increasing coverages, uniform coherent islands are observed with a dramatic increase in height. An appreciable density of large dislocated islands become evident at still higher coverages. Photoluminescence from these structures is discussed.< >
DOI:10.1109/ICIPRM.1994.328306