Bulk InP technologies: InP against GaAs

Bulk InP technologies: InP against GaAs

Recently, the quality of InP bulk crystals has been greatly improved. In this paper, recent developments of InP crystal technologies are reviewed, including growth of large crystals, reduction of dislocation densities, preparation of undoped semi-insulating (SI) materials and polishing qualities. We...

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Bibliographische Detailangaben
Hauptverfasser: Kohiro, K., Kainosho, K., Hirano, R., Uchida, M., Katsura, S., Kurita, H., Fukui, T., Oda, O.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Crystalline materials
Gallium arsenide
Indium phosphide
Manufacturing
Optical materials
Photonic crystals
Production
Semiconductor materials
Substrates
Surface charging
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Zusammenfassung:Recently, the quality of InP bulk crystals has been greatly improved. In this paper, recent developments of InP crystal technologies are reviewed, including growth of large crystals, reduction of dislocation densities, preparation of undoped semi-insulating (SI) materials and polishing qualities. We also discuss the status of InP against GaAs from the viewpoints of substrate qualities and the production capability.< >
DOI:10.1109/ICIPRM.1994.328244