Temperature and transverse mode characteristics of InGaAsP (1.3 /spl mu/m) vertical cavity lasers on GaAs substrates

We present the transverse mode and temperature characteristics of a novel InGaAsP (1.3 /spl mu/m) vertical cavity laser structure which employs a lattice mismatched GaAs/AlAs mirror and one dielectric mirror. The devices lase in a linearly polarized, single transverse mode up to 2 times threshold. T...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Dudley, J.J., Babic, D.I., Mirin, R., Yang, L., Miller, B.I., Hu, E.L., Bowers, J.E.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Bandwidth Dielectric substrates Etching Fiber lasers Gallium arsenide Indium phosphide Laser modes Mirrors Reflectivity Temperature distribution
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	318
container_issue
container_start_page	315
container_title
container_volume
creator	Dudley, J.J. Babic, D.I. Mirin, R. Yang, L. Miller, B.I. Hu, E.L. Bowers, J.E.
description	We present the transverse mode and temperature characteristics of a novel InGaAsP (1.3 /spl mu/m) vertical cavity laser structure which employs a lattice mismatched GaAs/AlAs mirror and one dielectric mirror. The devices lase in a linearly polarized, single transverse mode up to 2 times threshold. The characteristic temperature of 11 /spl mu/m diameter devices is 67 K at room temperature.< >
doi_str_mv	10.1109/ICIPRM.1994.328233
format	Conference Proceeding
fullrecord	<record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_328233</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>328233</ieee_id><sourcerecordid>328233</sourcerecordid><originalsourceid>FETCH-LOGICAL-i104t-5bb00eb59ccc81e3a8401e6e44d98a9698526113a262d1d5685214fcfd9f84093</originalsourceid><addsrcrecordid>eNotkEFLw0AQhRdEUGv_QE9z1EPS3ewm3T2WoG2gYpEK3spkM8FIkpbdbaH_3pU6l8eD732HYWwmeCoEN_OqrLYfb6kwRqUy05mUN-yBLzSXQi2Krzs29f6Hx1M5X2T6noUdDUdyGE6OAMcGgsPRn8l5guHQENhvdGgDuc6Hzno4tFCNK1z6LTyJVMLcH3sYTvPhGeIqItiDxXMXLtCjjx44jPDHgz_VPtoD-Ud222LvafqfE_b5-rIr18nmfVWVy03SCa5Cktc151TnxlqrBUnUigsqSKnGaDSF0XlWCCExK7JGNHkRu1CtbRvTRtTICZtdvR0R7Y-uG9Bd9te_yF-Esllw</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Temperature and transverse mode characteristics of InGaAsP (1.3 /spl mu/m) vertical cavity lasers on GaAs substrates</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Dudley, J.J. ; Babic, D.I. ; Mirin, R. ; Yang, L. ; Miller, B.I. ; Hu, E.L. ; Bowers, J.E.</creator><creatorcontrib>Dudley, J.J. ; Babic, D.I. ; Mirin, R. ; Yang, L. ; Miller, B.I. ; Hu, E.L. ; Bowers, J.E.</creatorcontrib><description>We present the transverse mode and temperature characteristics of a novel InGaAsP (1.3 /spl mu/m) vertical cavity laser structure which employs a lattice mismatched GaAs/AlAs mirror and one dielectric mirror. The devices lase in a linearly polarized, single transverse mode up to 2 times threshold. The characteristic temperature of 11 /spl mu/m diameter devices is 67 K at room temperature.< ></description><identifier>ISBN: 078031476X</identifier><identifier>ISBN: 9780780314764</identifier><identifier>DOI: 10.1109/ICIPRM.1994.328233</identifier><language>eng</language><publisher>IEEE</publisher><subject>Bandwidth ; Dielectric substrates ; Etching ; Fiber lasers ; Gallium arsenide ; Indium phosphide ; Laser modes ; Mirrors ; Reflectivity ; Temperature distribution</subject><ispartof>Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM), 1994, p.315-318</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/328233$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/328233$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Dudley, J.J.</creatorcontrib><creatorcontrib>Babic, D.I.</creatorcontrib><creatorcontrib>Mirin, R.</creatorcontrib><creatorcontrib>Yang, L.</creatorcontrib><creatorcontrib>Miller, B.I.</creatorcontrib><creatorcontrib>Hu, E.L.</creatorcontrib><creatorcontrib>Bowers, J.E.</creatorcontrib><title>Temperature and transverse mode characteristics of InGaAsP (1.3 /spl mu/m) vertical cavity lasers on GaAs substrates</title><title>Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)</title><addtitle>ICIPRM</addtitle><description>We present the transverse mode and temperature characteristics of a novel InGaAsP (1.3 /spl mu/m) vertical cavity laser structure which employs a lattice mismatched GaAs/AlAs mirror and one dielectric mirror. The devices lase in a linearly polarized, single transverse mode up to 2 times threshold. The characteristic temperature of 11 /spl mu/m diameter devices is 67 K at room temperature.< ></description><subject>Bandwidth</subject><subject>Dielectric substrates</subject><subject>Etching</subject><subject>Fiber lasers</subject><subject>Gallium arsenide</subject><subject>Indium phosphide</subject><subject>Laser modes</subject><subject>Mirrors</subject><subject>Reflectivity</subject><subject>Temperature distribution</subject><isbn>078031476X</isbn><isbn>9780780314764</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1994</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkEFLw0AQhRdEUGv_QE9z1EPS3ewm3T2WoG2gYpEK3spkM8FIkpbdbaH_3pU6l8eD732HYWwmeCoEN_OqrLYfb6kwRqUy05mUN-yBLzSXQi2Krzs29f6Hx1M5X2T6noUdDUdyGE6OAMcGgsPRn8l5guHQENhvdGgDuc6Hzno4tFCNK1z6LTyJVMLcH3sYTvPhGeIqItiDxXMXLtCjjx44jPDHgz_VPtoD-Ud222LvafqfE_b5-rIr18nmfVWVy03SCa5Cktc151TnxlqrBUnUigsqSKnGaDSF0XlWCCExK7JGNHkRu1CtbRvTRtTICZtdvR0R7Y-uG9Bd9te_yF-Esllw</recordid><startdate>1994</startdate><enddate>1994</enddate><creator>Dudley, J.J.</creator><creator>Babic, D.I.</creator><creator>Mirin, R.</creator><creator>Yang, L.</creator><creator>Miller, B.I.</creator><creator>Hu, E.L.</creator><creator>Bowers, J.E.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1994</creationdate><title>Temperature and transverse mode characteristics of InGaAsP (1.3 /spl mu/m) vertical cavity lasers on GaAs substrates</title><author>Dudley, J.J. ; Babic, D.I. ; Mirin, R. ; Yang, L. ; Miller, B.I. ; Hu, E.L. ; Bowers, J.E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-5bb00eb59ccc81e3a8401e6e44d98a9698526113a262d1d5685214fcfd9f84093</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Bandwidth</topic><topic>Dielectric substrates</topic><topic>Etching</topic><topic>Fiber lasers</topic><topic>Gallium arsenide</topic><topic>Indium phosphide</topic><topic>Laser modes</topic><topic>Mirrors</topic><topic>Reflectivity</topic><topic>Temperature distribution</topic><toplevel>online_resources</toplevel><creatorcontrib>Dudley, J.J.</creatorcontrib><creatorcontrib>Babic, D.I.</creatorcontrib><creatorcontrib>Mirin, R.</creatorcontrib><creatorcontrib>Yang, L.</creatorcontrib><creatorcontrib>Miller, B.I.</creatorcontrib><creatorcontrib>Hu, E.L.</creatorcontrib><creatorcontrib>Bowers, J.E.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Dudley, J.J.</au><au>Babic, D.I.</au><au>Mirin, R.</au><au>Yang, L.</au><au>Miller, B.I.</au><au>Hu, E.L.</au><au>Bowers, J.E.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Temperature and transverse mode characteristics of InGaAsP (1.3 /spl mu/m) vertical cavity lasers on GaAs substrates</atitle><btitle>Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)</btitle><stitle>ICIPRM</stitle><date>1994</date><risdate>1994</risdate><spage>315</spage><epage>318</epage><pages>315-318</pages><isbn>078031476X</isbn><isbn>9780780314764</isbn><abstract>We present the transverse mode and temperature characteristics of a novel InGaAsP (1.3 /spl mu/m) vertical cavity laser structure which employs a lattice mismatched GaAs/AlAs mirror and one dielectric mirror. The devices lase in a linearly polarized, single transverse mode up to 2 times threshold. The characteristic temperature of 11 /spl mu/m diameter devices is 67 K at room temperature.< ></abstract><pub>IEEE</pub><doi>10.1109/ICIPRM.1994.328233</doi><tpages>4</tpages></addata></record>
fulltext	fulltext_linktorsrc
identifier	ISBN: 078031476X
ispartof	Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM), 1994, p.315-318
issn
language	eng
recordid	cdi_ieee_primary_328233
source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Bandwidth Dielectric substrates Etching Fiber lasers Gallium arsenide Indium phosphide Laser modes Mirrors Reflectivity Temperature distribution
title	Temperature and transverse mode characteristics of InGaAsP (1.3 /spl mu/m) vertical cavity lasers on GaAs substrates
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-18T03%3A14%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Temperature%20and%20transverse%20mode%20characteristics%20of%20InGaAsP%20(1.3%20/spl%20mu/m)%20vertical%20cavity%20lasers%20on%20GaAs%20substrates&rft.btitle=Proceedings%20of%201994%20IEEE%206th%20International%20Conference%20on%20Indium%20Phosphide%20and%20Related%20Materials%20(IPRM)&rft.au=Dudley,%20J.J.&rft.date=1994&rft.spage=315&rft.epage=318&rft.pages=315-318&rft.isbn=078031476X&rft.isbn_list=9780780314764&rft_id=info:doi/10.1109/ICIPRM.1994.328233&rft_dat=%3Cieee_6IE%3E328233%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=328233&rfr_iscdi=true