Temperature and transverse mode characteristics of InGaAsP (1.3 /spl mu/m) vertical cavity lasers on GaAs substrates

Temperature and transverse mode characteristics of InGaAsP (1.3 /spl mu/m) vertical cavity lasers on GaAs substrates

We present the transverse mode and temperature characteristics of a novel InGaAsP (1.3 /spl mu/m) vertical cavity laser structure which employs a lattice mismatched GaAs/AlAs mirror and one dielectric mirror. The devices lase in a linearly polarized, single transverse mode up to 2 times threshold. T...

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Bibliographische Detailangaben
Hauptverfasser: Dudley, J.J., Babic, D.I., Mirin, R., Yang, L., Miller, B.I., Hu, E.L., Bowers, J.E.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bandwidth
Dielectric substrates
Etching
Fiber lasers
Gallium arsenide
Indium phosphide
Laser modes
Mirrors
Reflectivity
Temperature distribution
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Zusammenfassung:We present the transverse mode and temperature characteristics of a novel InGaAsP (1.3 /spl mu/m) vertical cavity laser structure which employs a lattice mismatched GaAs/AlAs mirror and one dielectric mirror. The devices lase in a linearly polarized, single transverse mode up to 2 times threshold. The characteristic temperature of 11 /spl mu/m diameter devices is 67 K at room temperature.< >
DOI:10.1109/ICIPRM.1994.328233