Low pressure pyrolysis of alternative phosphorous precursors for chemical beam epitaxial growth of InP and related compounds

Low pressure pyrolysis of alternative phosphorous precursors for chemical beam epitaxial growth of InP and related compounds

The most widely used phosphorous source in chemical beam epitaxy (CBE) is phosphine (PH/sub 3/). However, because it is highly toxic, alternatives to phosphine have been sought for the growth of phosphorous-containing compounds. We have investigated the pyrolysis rates and reaction products, in low...

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Bibliographische Detailangaben
Hauptverfasser: Hill, C.W., Stringfellow, G.B., Sadwick, L.P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Chemical compounds
Chemical engineering
Cities and towns
Epitaxial growth
Hydrogen
Indium phosphide
Inductors
Materials science and technology
Molecular beam epitaxial growth
Temperature
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Zusammenfassung:The most widely used phosphorous source in chemical beam epitaxy (CBE) is phosphine (PH/sub 3/). However, because it is highly toxic, alternatives to phosphine have been sought for the growth of phosphorous-containing compounds. We have investigated the pyrolysis rates and reaction products, in low pressure conditions, of three alternative phosphorous precursors: tertiarybutylphosphine (TBP), bisphosphinoethane (BPE) and trisdimethylaminophosphorous (TDMAP).< >
DOI:10.1109/ICIPRM.1994.328188