A new type of Schottky tunnel transistor

A new type of Schottky tunnel transistor

A new type of tunnel transistor, in which electrons can tunnel through a very thin Schottky barrier between an n/sup +/- accumulation-layer formed just under a MOS gate for controlling the tunneling current and the Schottky metal, is proposed and demonstrated. This tunnel transistor has no threshold...

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Veröffentlicht in:IEEE electron device letters 1994-10, Vol.15 (10), p.412-414
Hauptverfasser: Kimura, M., Matsudate, T.
Format: Artikel
Sprache:eng
Schlagworte:
Cathodes
Circuit simulation
Delay
Electrodes
Electrons
Hysteresis
MOSFETs
Schottky barriers
Threshold voltage
Tunneling
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Zusammenfassung:A new type of tunnel transistor, in which electrons can tunnel through a very thin Schottky barrier between an n/sup +/- accumulation-layer formed just under a MOS gate for controlling the tunneling current and the Schottky metal, is proposed and demonstrated. This tunnel transistor has no threshold voltage in cathode current I/sub k/ vs. cathode voltage V/sub k/ curves. Theoretical calculations based on Stratton's tunneling theory are carried out and have trends similar to the experimental results.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.320985