High-performance self-aligned (Al,Ga)As/(In,Ga)As pseudomorphic HIGFETs

Transconductance as high as 676 mS/mm at 300 K was observed to 0.7*10- mu m/sup 2/ n-channel devices (HIGFETs) made on epilayers with Al/sub 0.3/Ga/sub 0.7/As insulator thickness of 200 AA and In/sub 0.15/Ga/sub 0.85/As channel thickness of 150 AA. An FET K value (K=W/sub g/U epsilon /2aL/sub g/) as...

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Veröffentlicht in:	IEEE electron device letters 1989-05, Vol.10 (5), p.225-226, Article 225
Hauptverfasser:	Abrokwah, J.K., Stephens, J.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuits Electronics Exact sciences and technology Fabrication FETs Gallium arsenide Insulation Molecular beam epitaxial growth Rapid thermal annealing Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Threshold voltage Transconductance Transistors Very large scale integration
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Zusammenfassung:	Transconductance as high as 676 mS/mm at 300 K was observed to 0.7*10- mu m/sup 2/ n-channel devices (HIGFETs) made on epilayers with Al/sub 0.3/Ga/sub 0.7/As insulator thickness of 200 AA and In/sub 0.15/Ga/sub 0.85/As channel thickness of 150 AA. An FET K value (K=W/sub g/U epsilon /2aL/sub g/) as large as 10.6 mA/V/sup 2/ was also measured from another device with transconductance of 411 mS/mm. The high K values are achieved under normal FET operation without hole-injection or drain-avalanche breakdown effects. These results demonstrate the promise of pseudomorphic (Al,Ga)As/(In,Ga)As HIGFETs for high-performance circuit applications.< >
ISSN:	0741-3106 1558-0563
DOI:	10.1109/55.31728