Concentration and the temperature dependence of the in-plane uniaxial anisotropy in amorphous CoZrDy thin films

Amorphous transition metal-rare-earth thin films of composition (Co/sub 0.95/Zr/sub 0.05/)/sub 100-x/(Dy)/sub x/ were prepared by RF sputtering. During deposition a DC magnetic field of 700 Oe was applied parallel to the film plane, so the films exhibit a very well defined in-plane uniaxial anisotro...

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Veröffentlicht in:	IEEE transactions on magnetics 1994-03, Vol.30 (2), p.788-790
Hauptverfasser:	Roky, K., Suran, G., Porte, M., Sztern, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous materials Anisotropic magnetoresistance Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Data analysis Exact sciences and technology Interfacial magnetic properties (multilayers, magnetic quantum wells, superlattices, magnetic heterostructures) Magnetic fields Magnetic films Magnetic properties and materials Magnetic properties of monolayers and thin films Magnetic properties of surface, thin films and multilayers Metals. Metallurgy Physics Radio frequency Sputtering Temperature dependence Temperature distribution Zirconium
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Beschreibung
Zusammenfassung:	Amorphous transition metal-rare-earth thin films of composition (Co/sub 0.95/Zr/sub 0.05/)/sub 100-x/(Dy)/sub x/ were prepared by RF sputtering. During deposition a DC magnetic field of 700 Oe was applied parallel to the film plane, so the films exhibit a very well defined in-plane uniaxial anisotropy K/sub u/. The variations of K/sub u/ were investigated as a function of Dy content for the concentration range 9/spl les/x/spl les/26 and in the temperature range 4 K
ISSN:	0018-9464 1941-0069
DOI:	10.1109/20.312409