Ultra-high charge storage capacity ferroelectric lead zirconate titanate thin films for gigabit-scale DRAM's

Ultra-high charge storage capacity ferroelectric lead zirconate titanate thin films for gigabit-scale DRAM's

This paper describes an investigation of thickness scaling of sol gel-derived ferroelectric lead zirconate titanate (PZT) thin films that demonstrates the highest charge storage capacity (220 fC/ mu m/sup 2/ for a 1.5 V voltage swing) ever reported, low leakage current density (

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Bibliographische Detailangaben
Hauptverfasser: Moazzami, Maniar, Jones, Campbell, Mogab
Format: Tagungsbericht
Sprache:eng ; jpn
Schlagworte:
Dielectric hysteresis
Dielectric polarization
DRAM chips
Ferroelectric films
Ferroelectric memories
Lead compounds
Leakage currents
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Beschreibung
Zusammenfassung:This paper describes an investigation of thickness scaling of sol gel-derived ferroelectric lead zirconate titanate (PZT) thin films that demonstrates the highest charge storage capacity (220 fC/ mu m/sup 2/ for a 1.5 V voltage swing) ever reported, low leakage current density (
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1992.307519