High microwave power performance of self-aligned InGaP/GaAs heterojunction bipolar transistors

The results of experimental study and design criteria of high efficiency power heterojunction bipolar transistors (HBTs) are reported and discussed. Self-aligned npn HBTs fabricated by dry process technology have shown excellent device characteristics with low collector offset voltage (

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Bibliographische Detailangaben
Hauptverfasser:	Yang, L.W., Fu, S.T., Clark, B.F., Brozovich, R.S., Lin, H.H., Liu, S.M.J., Chao, P.C., Ren, F., Abernathy, C.R., Pearton, S.J., Lothian, J.R., Wisk, P.W., Fullowan, T.R., Chiu, T.Y., Pei, S.S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Gain Gallium arsenide Heterojunction bipolar transistors Knee Low voltage Microwave devices Millimeter wave technology Millimeter wave transistors Power transistors Topology
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Beschreibung
Zusammenfassung:	The results of experimental study and design criteria of high efficiency power heterojunction bipolar transistors (HBTs) are reported and discussed. Self-aligned npn HBTs fabricated by dry process technology have shown excellent device characteristics with low collector offset voltage (
DOI:	10.1109/CORNEL.1993.303067