Lead titanate thin films deposited by metallorganic chemical vapor deposition (MOCVD)
Highly transparent lead titanate (PbTiO/sub 3/) thin films were deposited on both platinum-coated silicon wafers and sapphire disks. The results were characterized using XRD (X-ray diffraction) to determine the phases present and the presence of preferred orientation. SEM (scanning electron microsco...
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| creator | Hendricks, W.C. Peng, C.H. Desu, S.B. |
| description | Highly transparent lead titanate (PbTiO/sub 3/) thin films were deposited on both platinum-coated silicon wafers and sapphire disks. The results were characterized using XRD (X-ray diffraction) to determine the phases present and the presence of preferred orientation. SEM (scanning electron microscopy) was used to examine the morphology of both the surface and the cross-section. UV-VIS-NIR (ultraviolet, visible, near infrared) spectrophotometry was used to determine the dispersion relationship and the optical band gap energy. XRD revealed a nonoriented film on sapphire while the film on the platinum substrate was preferably oriented in the |
| doi_str_mv | 10.1109/ISAF.1992.300690 |
| format | Conference Proceeding |
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The results were characterized using XRD (X-ray diffraction) to determine the phases present and the presence of preferred orientation. SEM (scanning electron microscopy) was used to examine the morphology of both the surface and the cross-section. UV-VIS-NIR (ultraviolet, visible, near infrared) spectrophotometry was used to determine the dispersion relationship and the optical band gap energy. XRD revealed a nonoriented film on sapphire while the film on the platinum substrate was preferably oriented in the</description><identifier>ISBN: 9780780304659</identifier><identifier>ISBN: 0780304659</identifier><identifier>DOI: 10.1109/ISAF.1992.300690</identifier><language>eng</language><publisher>IEEE</publisher><subject>Chemicals ; Lead ; Morphology ; Optical films ; Scanning electron microscopy ; Semiconductor thin films ; Silicon ; Sputtering ; Titanium compounds ; X-ray scattering</subject><ispartof>ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics, 1992, p.293-296</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/300690$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/300690$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Hendricks, W.C.</creatorcontrib><creatorcontrib>Peng, C.H.</creatorcontrib><creatorcontrib>Desu, S.B.</creatorcontrib><title>Lead titanate thin films deposited by metallorganic chemical vapor deposition (MOCVD)</title><title>ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics</title><addtitle>ISAF</addtitle><description>Highly transparent lead titanate (PbTiO/sub 3/) thin films were deposited on both platinum-coated silicon wafers and sapphire disks. The results were characterized using XRD (X-ray diffraction) to determine the phases present and the presence of preferred orientation. SEM (scanning electron microscopy) was used to examine the morphology of both the surface and the cross-section. UV-VIS-NIR (ultraviolet, visible, near infrared) spectrophotometry was used to determine the dispersion relationship and the optical band gap energy. XRD revealed a nonoriented film on sapphire while the film on the platinum substrate was preferably oriented in the</description><subject>Chemicals</subject><subject>Lead</subject><subject>Morphology</subject><subject>Optical films</subject><subject>Scanning electron microscopy</subject><subject>Semiconductor thin films</subject><subject>Silicon</subject><subject>Sputtering</subject><subject>Titanium compounds</subject><subject>X-ray scattering</subject><isbn>9780780304659</isbn><isbn>0780304659</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1992</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1j89LwzAYhgMiKLN38ZSjHlq_L0lTcxzVzUFlB53XkSZfXaS_aIOw_97B9OWF5_LywMvYLUKGCOZx875cZWiMyCSANnDBElM8wakSlM7NFUvm-RtOUTkYYa7ZriLreQzR9jYSj4fQ8ya03cw9jcMcInleH3lH0bbtMH3ZPjjuDtQFZ1v-Y8dh-l-Goef3b9vy8_nhhl02tp0p-eOC7VYvH-VrWm3Xm3JZpQELFdPCNA2qIveq9kKQr2ujlRY1FOg1-tyBkwhaWonWg_NCoiavrVOGCsxRLtjd2RuIaD9OobPTcX_-Ln8BHSBPAA</recordid><startdate>1992</startdate><enddate>1992</enddate><creator>Hendricks, W.C.</creator><creator>Peng, C.H.</creator><creator>Desu, S.B.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1992</creationdate><title>Lead titanate thin films deposited by metallorganic chemical vapor deposition (MOCVD)</title><author>Hendricks, W.C. ; Peng, C.H. ; Desu, S.B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i174t-79ff1475d4bd22edbb96462b071d61d5c0c31063a31ad0cd2316ed6ac49e71513</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Chemicals</topic><topic>Lead</topic><topic>Morphology</topic><topic>Optical films</topic><topic>Scanning electron microscopy</topic><topic>Semiconductor thin films</topic><topic>Silicon</topic><topic>Sputtering</topic><topic>Titanium compounds</topic><topic>X-ray scattering</topic><toplevel>online_resources</toplevel><creatorcontrib>Hendricks, W.C.</creatorcontrib><creatorcontrib>Peng, C.H.</creatorcontrib><creatorcontrib>Desu, S.B.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hendricks, W.C.</au><au>Peng, C.H.</au><au>Desu, S.B.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Lead titanate thin films deposited by metallorganic chemical vapor deposition (MOCVD)</atitle><btitle>ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics</btitle><stitle>ISAF</stitle><date>1992</date><risdate>1992</risdate><spage>293</spage><epage>296</epage><pages>293-296</pages><isbn>9780780304659</isbn><isbn>0780304659</isbn><abstract>Highly transparent lead titanate (PbTiO/sub 3/) thin films were deposited on both platinum-coated silicon wafers and sapphire disks. The results were characterized using XRD (X-ray diffraction) to determine the phases present and the presence of preferred orientation. SEM (scanning electron microscopy) was used to examine the morphology of both the surface and the cross-section. UV-VIS-NIR (ultraviolet, visible, near infrared) spectrophotometry was used to determine the dispersion relationship and the optical band gap energy. XRD revealed a nonoriented film on sapphire while the film on the platinum substrate was preferably oriented in the</abstract><pub>IEEE</pub><doi>10.1109/ISAF.1992.300690</doi><tpages>4</tpages></addata></record> |
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| ispartof | ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics, 1992, p.293-296 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Chemicals Lead Morphology Optical films Scanning electron microscopy Semiconductor thin films Silicon Sputtering Titanium compounds X-ray scattering |
| title | Lead titanate thin films deposited by metallorganic chemical vapor deposition (MOCVD) |
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