Dielectric behavior of ferroelectric thin films at high frequencies
The high-frequency dielectric response of sol-gel-derived lead zirconate titanate (PZT) thin films have been investigated. Conceptualizing the presence of interface layers was critical in explaining the dielectric measurements. By a careful control of the processing parameters, aided by rapid therma...
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| creator | Chen, J. Udayakumar, K.R. Brooks, K.G. Cross, L.E. |
| description | The high-frequency dielectric response of sol-gel-derived lead zirconate titanate (PZT) thin films have been investigated. Conceptualizing the presence of interface layers was critical in explaining the dielectric measurements. By a careful control of the processing parameters, aided by rapid thermal annealing, the low-frequency dielectric characteristics could be sustained up to a gigahertz range. Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/, which is paraelectric at room temperature, appears to be a potential candidate material for high-frequency applications.< > |
| doi_str_mv | 10.1109/ISAF.1992.300657 |
| format | Conference Proceeding |
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Conceptualizing the presence of interface layers was critical in explaining the dielectric measurements. By a careful control of the processing parameters, aided by rapid thermal annealing, the low-frequency dielectric characteristics could be sustained up to a gigahertz range. Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/, which is paraelectric at room temperature, appears to be a potential candidate material for high-frequency applications.< ></description><identifier>ISBN: 9780780304659</identifier><identifier>ISBN: 0780304659</identifier><identifier>DOI: 10.1109/ISAF.1992.300657</identifier><language>eng</language><publisher>IEEE</publisher><subject>Dielectric measurements ; Dielectric thin films ; Ferroelectric materials ; Frequency ; Process control ; Rapid thermal annealing ; Rapid thermal processing ; Strontium ; Temperature ; Titanium compounds</subject><ispartof>ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics, 1992, p.182-184</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/300657$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/300657$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chen, J.</creatorcontrib><creatorcontrib>Udayakumar, K.R.</creatorcontrib><creatorcontrib>Brooks, K.G.</creatorcontrib><creatorcontrib>Cross, L.E.</creatorcontrib><title>Dielectric behavior of ferroelectric thin films at high frequencies</title><title>ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics</title><addtitle>ISAF</addtitle><description>The high-frequency dielectric response of sol-gel-derived lead zirconate titanate (PZT) thin films have been investigated. Conceptualizing the presence of interface layers was critical in explaining the dielectric measurements. By a careful control of the processing parameters, aided by rapid thermal annealing, the low-frequency dielectric characteristics could be sustained up to a gigahertz range. Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/, which is paraelectric at room temperature, appears to be a potential candidate material for high-frequency applications.< ></description><subject>Dielectric measurements</subject><subject>Dielectric thin films</subject><subject>Ferroelectric materials</subject><subject>Frequency</subject><subject>Process control</subject><subject>Rapid thermal annealing</subject><subject>Rapid thermal processing</subject><subject>Strontium</subject><subject>Temperature</subject><subject>Titanium compounds</subject><isbn>9780780304659</isbn><isbn>0780304659</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1992</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo9j1FLwzAUhQMiKLPv4lP-QOtN0ia5j6M6HQx8cHseaXJjI92qaRX89w4mHg58Dwc-OIzdCqiEALxfvy5XlUCUlQLQjblgBRoLpyqodYNXrJimdzilbgAlXrP2IdFAfs7J8456953GzMfII-U8_i9zn448puEwcTfzPr31PGb6_KKjTzTdsMvohomKPy7YbvW4bZ_LzcvTul1uyiRMPZfWWHI-gADbBYlSGKUpBKGU0-gNQZABpbeiVk3UnYokoyGP0hJog51asLuzNxHR_iOng8s_-_NT9Qs4jklB</recordid><startdate>1992</startdate><enddate>1992</enddate><creator>Chen, J.</creator><creator>Udayakumar, K.R.</creator><creator>Brooks, K.G.</creator><creator>Cross, L.E.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1992</creationdate><title>Dielectric behavior of ferroelectric thin films at high frequencies</title><author>Chen, J. ; Udayakumar, K.R. ; Brooks, K.G. ; Cross, L.E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i174t-878eacd0108bd2921736edd133a69c7e0d2d92c81435f6b3fe2f7ec928e0679b3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Dielectric measurements</topic><topic>Dielectric thin films</topic><topic>Ferroelectric materials</topic><topic>Frequency</topic><topic>Process control</topic><topic>Rapid thermal annealing</topic><topic>Rapid thermal processing</topic><topic>Strontium</topic><topic>Temperature</topic><topic>Titanium compounds</topic><toplevel>online_resources</toplevel><creatorcontrib>Chen, J.</creatorcontrib><creatorcontrib>Udayakumar, K.R.</creatorcontrib><creatorcontrib>Brooks, K.G.</creatorcontrib><creatorcontrib>Cross, L.E.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, J.</au><au>Udayakumar, K.R.</au><au>Brooks, K.G.</au><au>Cross, L.E.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Dielectric behavior of ferroelectric thin films at high frequencies</atitle><btitle>ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics</btitle><stitle>ISAF</stitle><date>1992</date><risdate>1992</risdate><spage>182</spage><epage>184</epage><pages>182-184</pages><isbn>9780780304659</isbn><isbn>0780304659</isbn><abstract>The high-frequency dielectric response of sol-gel-derived lead zirconate titanate (PZT) thin films have been investigated. Conceptualizing the presence of interface layers was critical in explaining the dielectric measurements. By a careful control of the processing parameters, aided by rapid thermal annealing, the low-frequency dielectric characteristics could be sustained up to a gigahertz range. Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/, which is paraelectric at room temperature, appears to be a potential candidate material for high-frequency applications.< ></abstract><pub>IEEE</pub><doi>10.1109/ISAF.1992.300657</doi><tpages>3</tpages></addata></record> |
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| ispartof | ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics, 1992, p.182-184 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Dielectric measurements Dielectric thin films Ferroelectric materials Frequency Process control Rapid thermal annealing Rapid thermal processing Strontium Temperature Titanium compounds |
| title | Dielectric behavior of ferroelectric thin films at high frequencies |
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