Dielectric behavior of ferroelectric thin films at high frequencies

The high-frequency dielectric response of sol-gel-derived lead zirconate titanate (PZT) thin films have been investigated. Conceptualizing the presence of interface layers was critical in explaining the dielectric measurements. By a careful control of the processing parameters, aided by rapid thermal annealing, the low-frequency dielectric characteristics could be sustained up to a gigahertz range. Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/, which is paraelectric at room temperature, appears to be a potential candidate material for high-frequency applications.< >