A study on the short circuit destruction of IGBTs

The short-circuit destruction of class n-ch 600-V IGBTs (insulated-gate bipolar transistors) is investigated experimentally and analyzed with the help of device simulation, focusing on three major destruction modes (power constant, energy constant, and turn-off destruction). Measured power dissipati...

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Hauptverfasser:	Yamashita, J., Uenishi, A., Tomomatsu, Y., Haruguchi, H., Takahashi, H., Takata, I., Hagino, H.
Format:	Tagungsbericht
Sprache:	eng ; jpn
Schlagworte:	Analytical models Bipolar transistors Circuit simulation Insulated gate bipolar transistors Large scale integration Power dissipation Power engineering and energy Research and development Temperature Voltage
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Beschreibung
Zusammenfassung:	The short-circuit destruction of class n-ch 600-V IGBTs (insulated-gate bipolar transistors) is investigated experimentally and analyzed with the help of device simulation, focusing on three major destruction modes (power constant, energy constant, and turn-off destruction). Measured power dissipation for power constant destruction is 2000 approximately 2400 kW/cm/sup 2/, which coincides with the simulation result. The energy constant destruction and turn-off destruction are found to depend on the thermal effect. The critical temperature for destruction is predicted to be 350 degrees C.< >
ISSN:	1063-6854 1946-0201
DOI:	10.1109/ISPSD.1993.297103