An all-implanted, self-aligned, GaAs JFET with a nonalloyed W/p/sup +/-GaAs ohmic gate contact

We describe a self-aligned, refractory metal gate contact, enhancement mode, GaAs junction field effect transistor (JFET) where all impurity doping was done by ion implantation. Processing conditions are presented for realizing a high gate turn-on voltage (/spl sim/1.0 V at 1 mA/mm of gate current)...

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Veröffentlicht in:	IEEE transactions on electron devices 1994-07, Vol.41 (7), p.1078-1082
Hauptverfasser:	Zolper, J.C., Baca, A.G., Shul, R.J., Howard, A.J., Rieger, D.J., Sherwin, M.E., Lovejoy, M.L., Hjalmarson, H.P., Draper, B.L., Klem, J.F., Hietala, V.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Doping FETs Gallium arsenide Implants Impurities Ion implantation MESFETs Ohmic contacts Voltage
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