An all-implanted, self-aligned, GaAs JFET with a nonalloyed W/p/sup +/-GaAs ohmic gate contact

An all-implanted, self-aligned, GaAs JFET with a nonalloyed W/p/sup +/-GaAs ohmic gate contact

We describe a self-aligned, refractory metal gate contact, enhancement mode, GaAs junction field effect transistor (JFET) where all impurity doping was done by ion implantation. Processing conditions are presented for realizing a high gate turn-on voltage (/spl sim/1.0 V at 1 mA/mm of gate current)...

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Veröffentlicht in:IEEE transactions on electron devices 1994-07, Vol.41 (7), p.1078-1082
Hauptverfasser: Zolper, J.C., Baca, A.G., Shul, R.J., Howard, A.J., Rieger, D.J., Sherwin, M.E., Lovejoy, M.L., Hjalmarson, H.P., Draper, B.L., Klem, J.F., Hietala, V.M.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Doping
FETs
Gallium arsenide
Implants
Impurities
Ion implantation
MESFETs
Ohmic contacts
Voltage
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Zusammenfassung:We describe a self-aligned, refractory metal gate contact, enhancement mode, GaAs junction field effect transistor (JFET) where all impurity doping was done by ion implantation. Processing conditions are presented for realizing a high gate turn-on voltage (/spl sim/1.0 V at 1 mA/mm of gate current) relative to GaAs MESFET's. The high gate turn-on voltage is the result of optimizing the p/sup +/-gate implant and anneal to achieve a nonalloyed ohmic contact between the implanted p/sup +/-GaAs and the sputter deposited tungsten gate contact. Initial nominally 1.0 /spl mu/m/spl times/50 /spl mu/m n-JFET's have a transconductance of 85 mS/mm and f/sub t/ of 11.4 GHz.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.293333