A base-band NDS electrode configuration for HACT devices

A base-band NDS electrode configuration for HACT devices

Heterostructure Acoustic Charge Transport (HACT) devices have been fabricated with a new nondestructive sense (NDS) electrode structure that provides for the recovery of base-band signals without the use of an integrating capacitor. This electrode structure provides an output signal comprising an RF...

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Veröffentlicht in:IEEE transactions on ultrasonics, ferroelectrics, and frequency control ferroelectrics, and frequency control, 1994-05, Vol.41 (3), p.416-418
Hauptverfasser: Carroll, R.D., Merritt, S.W., Branciforte, E.J., Tanski, W.J., Cullen, D.E., Sacks, R.N.
Format: Artikel
Sprache:eng
Schlagworte:
Acoustic devices
Acoustic wave devices, piezoelectric and piezoresistive devices
Amplitude modulation
Applied sciences
Capacitors
Delay
Diodes
Electrodes
Electronics
Exact sciences and technology
Frequency modulation
Radio frequency
RF signals
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Surface acoustic waves
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Zusammenfassung:Heterostructure Acoustic Charge Transport (HACT) devices have been fabricated with a new nondestructive sense (NDS) electrode structure that provides for the recovery of base-band signals without the use of an integrating capacitor. This electrode structure provides an output signal comprising an RF carrier at the SAW frequency, amplitude modulated by the sampled input signal which has been delayed by a period proportional to the output electrodes distance from the input diode. The output of the NDS electrode structure is subsequently demodulated to provide the base-band signal.< >
ISSN:0885-3010
1525-8955
DOI:10.1109/58.285479