Electro-optic measurement of GaAs switch voltage during optically activated avalanche
The dynamic turn-on voltage of a bulk GaAs photoconductive switch in a microstrip transmission line was measured for the first time using the electro-optic effect of the switch itself. The technique used a 905 nm laser trigger synchronized with a pulsed 1.06 /spl mu/m probe beam. The GaAs voltage wa...
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| Veröffentlicht in: | IEEE transactions on electron devices 1994-05, Vol.41 (5), p.655-660 |
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| container_end_page | 660 |
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| container_issue | 5 |
| container_start_page | 655 |
| container_title | IEEE transactions on electron devices |
| container_volume | 41 |
| creator | Adams, J.C. Ferrier, S.G. Falk, R.A. Capps, C.D. |
| description | The dynamic turn-on voltage of a bulk GaAs photoconductive switch in a microstrip transmission line was measured for the first time using the electro-optic effect of the switch itself. The technique used a 905 nm laser trigger synchronized with a pulsed 1.06 /spl mu/m probe beam. The GaAs voltage was found to collapse through zero following avalanche and depletion of the transmission line charge. A circuit model including contact lead inductance and an assumed rapid device recovery is developed which produces qualitative agreement with experimental observations.< > |
| doi_str_mv | 10.1109/16.285012 |
| format | Article |
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A circuit model including contact lead inductance and an assumed rapid device recovery is developed which produces qualitative agreement with experimental observations.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.285012</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Circuit properties ; Electric, optical and optoelectronic circuits ; Electronics ; Exact sciences and technology ; Gallium arsenide ; Laser modes ; Lasers and electrooptics ; Microstrip ; Miscellaneous ; Optical and optoelectronic circuits ; Optical pulses ; Optical switches ; Photoconductivity ; Time measurement ; Transmission line measurements ; Voltage</subject><ispartof>IEEE transactions on electron devices, 1994-05, Vol.41 (5), p.655-660</ispartof><rights>1994 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c221t-fbfa34713ea8189ddbe95b9b12c4e74f69d9ff4bbf3025db5f0d98720a3ed55a3</citedby><cites>FETCH-LOGICAL-c221t-fbfa34713ea8189ddbe95b9b12c4e74f69d9ff4bbf3025db5f0d98720a3ed55a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/285012$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/285012$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4139272$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Adams, J.C.</creatorcontrib><creatorcontrib>Ferrier, S.G.</creatorcontrib><creatorcontrib>Falk, R.A.</creatorcontrib><creatorcontrib>Capps, C.D.</creatorcontrib><title>Electro-optic measurement of GaAs switch voltage during optically activated avalanche</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>The dynamic turn-on voltage of a bulk GaAs photoconductive switch in a microstrip transmission line was measured for the first time using the electro-optic effect of the switch itself. The technique used a 905 nm laser trigger synchronized with a pulsed 1.06 /spl mu/m probe beam. The GaAs voltage was found to collapse through zero following avalanche and depletion of the transmission line charge. A circuit model including contact lead inductance and an assumed rapid device recovery is developed which produces qualitative agreement with experimental observations.< ></description><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Laser modes</subject><subject>Lasers and electrooptics</subject><subject>Microstrip</subject><subject>Miscellaneous</subject><subject>Optical and optoelectronic circuits</subject><subject>Optical pulses</subject><subject>Optical switches</subject><subject>Photoconductivity</subject><subject>Time measurement</subject><subject>Transmission line measurements</subject><subject>Voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNo9kL1PwzAQxS0EEqUwsDJ5QEgMKf5M7LGqyodUiYXOkeOcW6O0KbZT1P-elFSdTqf7vad7D6F7SiaUEv1C8wlTklB2gUZUyiLTucgv0YgQqjLNFb9GNzF-92suBBuh5bwBm0KbtbvkLd6AiV2ADWwTbh1-M9OI469Pdo33bZPMCnDdBb9d4X_eNM0BG5v83iSosdmbxmztGm7RlTNNhLvTHKPl6_xr9p4tPt8-ZtNFZhmjKXOVM1wUlINRVOm6rkDLSleUWQGFcLmutXOiqhwnTNaVdKTWqmDEcKilNHyMngbfXWh_Ooip3Phooem_gLaLJVOcCaWKHnweQBvaGAO4chf8xoRDSUl5LK6keTkU17OPJ1MT-4Qu9JF8PAsE5ZoVR-xhwDwAnK8njz_tnnaM</recordid><startdate>19940501</startdate><enddate>19940501</enddate><creator>Adams, J.C.</creator><creator>Ferrier, S.G.</creator><creator>Falk, R.A.</creator><creator>Capps, C.D.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19940501</creationdate><title>Electro-optic measurement of GaAs switch voltage during optically activated avalanche</title><author>Adams, J.C. ; Ferrier, S.G. ; Falk, R.A. ; Capps, C.D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c221t-fbfa34713ea8189ddbe95b9b12c4e74f69d9ff4bbf3025db5f0d98720a3ed55a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>Laser modes</topic><topic>Lasers and electrooptics</topic><topic>Microstrip</topic><topic>Miscellaneous</topic><topic>Optical and optoelectronic circuits</topic><topic>Optical pulses</topic><topic>Optical switches</topic><topic>Photoconductivity</topic><topic>Time measurement</topic><topic>Transmission line measurements</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Adams, J.C.</creatorcontrib><creatorcontrib>Ferrier, S.G.</creatorcontrib><creatorcontrib>Falk, R.A.</creatorcontrib><creatorcontrib>Capps, C.D.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Adams, J.C.</au><au>Ferrier, S.G.</au><au>Falk, R.A.</au><au>Capps, C.D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electro-optic measurement of GaAs switch voltage during optically activated avalanche</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1994-05-01</date><risdate>1994</risdate><volume>41</volume><issue>5</issue><spage>655</spage><epage>660</epage><pages>655-660</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The dynamic turn-on voltage of a bulk GaAs photoconductive switch in a microstrip transmission line was measured for the first time using the electro-optic effect of the switch itself. The technique used a 905 nm laser trigger synchronized with a pulsed 1.06 /spl mu/m probe beam. The GaAs voltage was found to collapse through zero following avalanche and depletion of the transmission line charge. A circuit model including contact lead inductance and an assumed rapid device recovery is developed which produces qualitative agreement with experimental observations.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.285012</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1994-05, Vol.41 (5), p.655-660 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_ieee_primary_285012 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Circuit properties Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Gallium arsenide Laser modes Lasers and electrooptics Microstrip Miscellaneous Optical and optoelectronic circuits Optical pulses Optical switches Photoconductivity Time measurement Transmission line measurements Voltage |
| title | Electro-optic measurement of GaAs switch voltage during optically activated avalanche |
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