Electro-optic measurement of GaAs switch voltage during optically activated avalanche

Electro-optic measurement of GaAs switch voltage during optically activated avalanche

The dynamic turn-on voltage of a bulk GaAs photoconductive switch in a microstrip transmission line was measured for the first time using the electro-optic effect of the switch itself. The technique used a 905 nm laser trigger synchronized with a pulsed 1.06 /spl mu/m probe beam. The GaAs voltage wa...

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Veröffentlicht in:IEEE transactions on electron devices 1994-05, Vol.41 (5), p.655-660
Hauptverfasser: Adams, J.C., Ferrier, S.G., Falk, R.A., Capps, C.D.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Gallium arsenide
Laser modes
Lasers and electrooptics
Microstrip
Miscellaneous
Optical and optoelectronic circuits
Optical pulses
Optical switches
Photoconductivity
Time measurement
Transmission line measurements
Voltage
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Beschreibung
Zusammenfassung:The dynamic turn-on voltage of a bulk GaAs photoconductive switch in a microstrip transmission line was measured for the first time using the electro-optic effect of the switch itself. The technique used a 905 nm laser trigger synchronized with a pulsed 1.06 /spl mu/m probe beam. The GaAs voltage was found to collapse through zero following avalanche and depletion of the transmission line charge. A circuit model including contact lead inductance and an assumed rapid device recovery is developed which produces qualitative agreement with experimental observations.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.285012