A SOM approach to the failure physics of optoelectronic devices

A SOM approach to the failure physics of optoelectronic devices

The use of optical beam induced current (OBIC) and photoluminescence (PL) implemented in a scanning optical microscope (SOM) for the study of the degradation mechanisms of optoelectronic devices is discussed. High sensitivity and spatial resolution in the localization of defects are demonstrated, un...

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Bibliographische Detailangaben
Hauptverfasser: Montangero, P., Azzini, G.A., Liberatore, M., Mancini, M., Pederzini, E., Serra, L.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Degradation
Optical beams
Optical filters
Optical microscopy
Optical sensors
Optoelectronic devices
Photoluminescence
Physics
Scanning electron microscopy
Transmission electron microscopy
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Zusammenfassung:The use of optical beam induced current (OBIC) and photoluminescence (PL) implemented in a scanning optical microscope (SOM) for the study of the degradation mechanisms of optoelectronic devices is discussed. High sensitivity and spatial resolution in the localization of defects are demonstrated, unique analytical schemes are described, and the cofocal photoluminescence (CPL) technique is introduced. Theoretical analysis and computations support the experimental results.< >
DOI:10.1109/RELPHY.1993.283271