Finite element analysis of SiGe npn HBT

A two dimensional general purpose device simulator (BISOF), based on finite element method, has been developed. The various material parameters, such as dielectric constant, energy bandgap, intrinsic carrier concentration, mobilities and life time etc., which vary with position due to the spatial va...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Hari Rama Krishna, G., Chakrabarti, N.B., Banerjee, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Charge carrier processes Composite materials Dielectric materials Equations Finite element methods Germanium silicon alloys Heterojunction bipolar transistors Photonic band gap Semiconductor materials Silicon germanium
Online-Zugang:	Volltext bestellen
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