Finite element analysis of SiGe npn HBT

Finite element analysis of SiGe npn HBT

A two dimensional general purpose device simulator (BISOF), based on finite element method, has been developed. The various material parameters, such as dielectric constant, energy bandgap, intrinsic carrier concentration, mobilities and life time etc., which vary with position due to the spatial va...

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Bibliographische Detailangaben
Hauptverfasser: Hari Rama Krishna, G., Chakrabarti, N.B., Banerjee, S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge carrier processes
Composite materials
Dielectric materials
Equations
Finite element methods
Germanium silicon alloys
Heterojunction bipolar transistors
Photonic band gap
Semiconductor materials
Silicon germanium
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Beschreibung
Zusammenfassung:A two dimensional general purpose device simulator (BISOF), based on finite element method, has been developed. The various material parameters, such as dielectric constant, energy bandgap, intrinsic carrier concentration, mobilities and life time etc., which vary with position due to the spatial variation of the composition of the have been taken into account. An npn heterojunction bipolar transistor has been analysed and the dependence of the device characteristics on the various Ge mole-fraction material parameters has also been studied using the program.< >
ISSN:1063-9667
2380-6923
DOI:10.1109/ICVD.1994.282711