A 1-GHz BiCMOS RF front-end IC
An RF front-end IC containing a low-noise amplifier and mixer is described. On-chip temperature and supply-voltage compensation is used to stabilize circuit performance. Realized in a BiCMOS process, the circuit consumes 13.0-mA total current from a 5-V supply. The amplifier gain at 900 MHz is 16 dB...
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| Veröffentlicht in: | IEEE journal of solid-state circuits 1994-03, Vol.29 (3), p.350-355 |
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| Sprache: | eng |
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| container_end_page | 355 |
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| container_issue | 3 |
| container_start_page | 350 |
| container_title | IEEE journal of solid-state circuits |
| container_volume | 29 |
| creator | Meyer, R.G. Mack, W.D. |
| description | An RF front-end IC containing a low-noise amplifier and mixer is described. On-chip temperature and supply-voltage compensation is used to stabilize circuit performance. Realized in a BiCMOS process, the circuit consumes 13.0-mA total current from a 5-V supply. The amplifier gain at 900 MHz is 16 dB, the noise figure is 2.2 dB, and the input third-order intermodulation intercept is /spl minus/10 dBm. The mixer input third-order intermodulation intercept is +6 dBm with 15.8 dB noise figure.< > |
| doi_str_mv | 10.1109/4.278360 |
| format | Article |
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On-chip temperature and supply-voltage compensation is used to stabilize circuit performance. Realized in a BiCMOS process, the circuit consumes 13.0-mA total current from a 5-V supply. The amplifier gain at 900 MHz is 16 dB, the noise figure is 2.2 dB, and the input third-order intermodulation intercept is /spl minus/10 dBm. The mixer input third-order intermodulation intercept is +6 dBm with 15.8 dB noise figure.< ></description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/4.278360</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Application specific integrated circuits ; Applied sciences ; BiCMOS integrated circuits ; Exact sciences and technology ; Filters ; Local oscillators ; Low-noise amplifiers ; Noise figure ; Radio frequency ; Radiocommunications ; Radiofrequency amplifiers ; Radiofrequency integrated circuits ; Telecommunications ; Telecommunications and information theory ; Temperature ; Transmitters. 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On-chip temperature and supply-voltage compensation is used to stabilize circuit performance. Realized in a BiCMOS process, the circuit consumes 13.0-mA total current from a 5-V supply. The amplifier gain at 900 MHz is 16 dB, the noise figure is 2.2 dB, and the input third-order intermodulation intercept is /spl minus/10 dBm. The mixer input third-order intermodulation intercept is +6 dBm with 15.8 dB noise figure.< ></description><subject>Application specific integrated circuits</subject><subject>Applied sciences</subject><subject>BiCMOS integrated circuits</subject><subject>Exact sciences and technology</subject><subject>Filters</subject><subject>Local oscillators</subject><subject>Low-noise amplifiers</subject><subject>Noise figure</subject><subject>Radio frequency</subject><subject>Radiocommunications</subject><subject>Radiofrequency amplifiers</subject><subject>Radiofrequency integrated circuits</subject><subject>Telecommunications</subject><subject>Telecommunications and information theory</subject><subject>Temperature</subject><subject>Transmitters. Receivers</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNqF0M9LwzAUwPEgCs4pePYgPYh46XxJmiY5anE_YDLwB3gLafoCla6dyXbQv95Kx66eHo_34Xt4hFxSmFAK-j6bMKl4DkdkRIVQKZX845iMAKhKNQM4JWcxfvZrlik6ItcPCU1n85_ksS6eV6_JyzTxoWu3KbZVsijOyYm3TcSL_RyT9-nTWzFPl6vZonhYpo5zsU21k9Jq2Sc5qtJriVp6XTpZisxXwFFa9A5tmVsG1quqlL7CXDJwgMgEH5PbobsJ3dcO49as6-iwaWyL3S4apqiUVPH_Yc4FF4r18G6ALnQxBvRmE-q1Dd-Ggvn7lMnM8Kme3uybNjrb-GBbV8eDz0DnIGnPrgZWI-Lhum_8AoCqbGk</recordid><startdate>19940301</startdate><enddate>19940301</enddate><creator>Meyer, R.G.</creator><creator>Mack, W.D.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19940301</creationdate><title>A 1-GHz BiCMOS RF front-end IC</title><author>Meyer, R.G. ; Mack, W.D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c335t-9c77a974483e8bf97e97f9bc7b54fd03e7aefceab6a20af8db7fde6720c0ee253</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Application specific integrated circuits</topic><topic>Applied sciences</topic><topic>BiCMOS integrated circuits</topic><topic>Exact sciences and technology</topic><topic>Filters</topic><topic>Local oscillators</topic><topic>Low-noise amplifiers</topic><topic>Noise figure</topic><topic>Radio frequency</topic><topic>Radiocommunications</topic><topic>Radiofrequency amplifiers</topic><topic>Radiofrequency integrated circuits</topic><topic>Telecommunications</topic><topic>Telecommunications and information theory</topic><topic>Temperature</topic><topic>Transmitters. Receivers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Meyer, R.G.</creatorcontrib><creatorcontrib>Mack, W.D.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Meyer, R.G.</au><au>Mack, W.D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 1-GHz BiCMOS RF front-end IC</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>1994-03-01</date><risdate>1994</risdate><volume>29</volume><issue>3</issue><spage>350</spage><epage>355</epage><pages>350-355</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>An RF front-end IC containing a low-noise amplifier and mixer is described. On-chip temperature and supply-voltage compensation is used to stabilize circuit performance. Realized in a BiCMOS process, the circuit consumes 13.0-mA total current from a 5-V supply. The amplifier gain at 900 MHz is 16 dB, the noise figure is 2.2 dB, and the input third-order intermodulation intercept is /spl minus/10 dBm. The mixer input third-order intermodulation intercept is +6 dBm with 15.8 dB noise figure.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/4.278360</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9200 |
| ispartof | IEEE journal of solid-state circuits, 1994-03, Vol.29 (3), p.350-355 |
| issn | 0018-9200 1558-173X |
| language | eng |
| recordid | cdi_ieee_primary_278360 |
| source | IEEE Electronic Library (IEL) |
| subjects | Application specific integrated circuits Applied sciences BiCMOS integrated circuits Exact sciences and technology Filters Local oscillators Low-noise amplifiers Noise figure Radio frequency Radiocommunications Radiofrequency amplifiers Radiofrequency integrated circuits Telecommunications Telecommunications and information theory Temperature Transmitters. Receivers |
| title | A 1-GHz BiCMOS RF front-end IC |
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