A 1-GHz BiCMOS RF front-end IC

A 1-GHz BiCMOS RF front-end IC

An RF front-end IC containing a low-noise amplifier and mixer is described. On-chip temperature and supply-voltage compensation is used to stabilize circuit performance. Realized in a BiCMOS process, the circuit consumes 13.0-mA total current from a 5-V supply. The amplifier gain at 900 MHz is 16 dB...

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Veröffentlicht in:IEEE journal of solid-state circuits 1994-03, Vol.29 (3), p.350-355
Hauptverfasser: Meyer, R.G., Mack, W.D.
Format: Artikel
Sprache:eng
Schlagworte:
Application specific integrated circuits
Applied sciences
BiCMOS integrated circuits
Exact sciences and technology
Filters
Local oscillators
Low-noise amplifiers
Noise figure
Radio frequency
Radiocommunications
Radiofrequency amplifiers
Radiofrequency integrated circuits
Telecommunications
Telecommunications and information theory
Temperature
Transmitters. Receivers
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Beschreibung
Zusammenfassung:An RF front-end IC containing a low-noise amplifier and mixer is described. On-chip temperature and supply-voltage compensation is used to stabilize circuit performance. Realized in a BiCMOS process, the circuit consumes 13.0-mA total current from a 5-V supply. The amplifier gain at 900 MHz is 16 dB, the noise figure is 2.2 dB, and the input third-order intermodulation intercept is /spl minus/10 dBm. The mixer input third-order intermodulation intercept is +6 dBm with 15.8 dB noise figure.< >
ISSN:0018-9200
1558-173X
DOI:10.1109/4.278360