Reactively matched optoelectronic transceivers on InP substrate for 6 GHz operation

Reactively matched optoelectronic transceivers on InP substrate for 6 GHz operation

The monolithic integration of optoelectronic devices with microwave impedance matching networks is presented. These are a GaInAs photodiodes and a GaInAsP buried ridge stripe structure laser emitting at 1.3 mu m; both are fabricated on semi-insulating InP substrate. The matching networks, consisting...

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Bibliographische Detailangaben
Hauptverfasser: Maricot, S., Vilcot, J.P., Decoster, D., Renaud, J.C., Rondi, D., Hirtz, P., Blondeau, R., de Cremoux, B.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Diode lasers
Equivalent circuits
Impedance matching
Indium phosphide
Microwave devices
Monolithic integrated circuits
Optoelectronic devices
Photodiodes
Substrates
Transceivers
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Zusammenfassung:The monolithic integration of optoelectronic devices with microwave impedance matching networks is presented. These are a GaInAs photodiodes and a GaInAsP buried ridge stripe structure laser emitting at 1.3 mu m; both are fabricated on semi-insulating InP substrate. The matching networks, consisting of reactive components, have been designed to match these devices to 50 Omega at 6 GHz with a bandwidth close to 10%. Compared to an unmatched link, an improvement of 12 dB at 6 GHz is theoretically obtained; experimentally, it has been measured to 11.4 dB at 5.6 GHz.< >
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1993.277050