InGaP/InGaAsP/GaAs 0.808 μm separate confinement laser diodes grown by metalorganic chemical vapor deposition

InGaP/InGaAsP/GaAs 0.808 μm separate confinement laser diodes grown by metalorganic chemical vapor deposition

Aluminum-free InGaP/InGaAsP/GaAs separate confinement heterostructures have been grown and used for broad-area stripe diode laser fabrication. The lasers demonstrated a uniform near-field pattern and emission spectrum at /spl lambda/=0.808 μm with a full width at half maximum /spl les/2 mm, meeting...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE photonics technology letters 1994-02, Vol.6 (2), p.132-134
Hauptverfasser: Diaz, J., Eliashevich, I., Mobarhan, K., Kolev, E., Wang, L.J., Garbuzov, D.Z., Razeghi, M.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Chemical lasers
Chemical vapor deposition
Diode lasers
Electronics
Epitaxial growth
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gallium arsenide
Gas lasers
Gold
Laser excitation
Lasers
Optics
Optoelectronic devices
Physics
Pump lasers
Schottky diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor lasers
laser diodes
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Aluminum-free InGaP/InGaAsP/GaAs separate confinement heterostructures have been grown and used for broad-area stripe diode laser fabrication. The lasers demonstrated a uniform near-field pattern and emission spectrum at /spl lambda/=0.808 μm with a full width at half maximum /spl les/2 mm, meeting the necessary requirements for Nd:YAG pumping systems. A threshold current density of 470 A/cm 2 and differential efficiency of 0.7 W/A with series resistance of 0.12 /spl Omega/ for 1.37 mm-long diodes have been measured.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.275405