Polysilicon-emitter bipolar transistors with interfacial nitride

Polysilicon-emitter bipolar transistors with interfacial nitride

Polysilicon emitter transistors with interfacial nitride and low emitter resistance have been fabricated reproducibly. The use of a phosphorus emitter has reduced the emitter resistance to a level comparable to that of barrier-free poly emitters. It is shown that the enhanced gain due to the interfa...

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Hauptverfasser: Nouri, F., Scharf, B.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Atomic measurements
Bipolar transistors
Electron emission
Equations
Implants
Rapid thermal processing
Reproducibility of results
Silicon
Thermal resistance
Tunneling
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description Polysilicon emitter transistors with interfacial nitride and low emitter resistance have been fabricated reproducibly. The use of a phosphorus emitter has reduced the emitter resistance to a level comparable to that of barrier-free poly emitters. It is shown that the enhanced gain due to the interfacial barrier can be traded off for a reduction in base resistance. The authors have investigated the thermal stability, electrical reliability and noise characteristics of the transistors.< >
doi_str_mv 10.1109/BIPOL.1992.274077
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_274077</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>274077</ieee_id><sourcerecordid>274077</sourcerecordid><originalsourceid>FETCH-LOGICAL-i174t-311f8e2fc7545fa7e70c5b16d66634bee802a18eaf4ed23f8cba2e76ff847bec3</originalsourceid><addsrcrecordid>eNotj81Kw0AURgdEUGsfQFd5gcT5zZ3s1KK1EGgXui4zkzt4JU3KzID07S3Ub3MWBw58jD0I3gjBu6fXzW7bN6LrZCNBc4ArdsfBcsVBgrlhy5x_-HnGWC66W_a8m8dTppHCPNV4oFIwVZ6O8-hSVZKbMuUyp1z9UvmuaDrr6AK5sZqoJBrwnl1HN2Zc_nPBvt7fPlcfdb9db1YvfU0CdKmVENGijAGMNtEBAg_Gi3Zo21Zpj2i5dMKiixoHqaIN3kmENkarwWNQC_Z46RIi7o-JDi6d9peP6g-wjkm1</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Polysilicon-emitter bipolar transistors with interfacial nitride</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Nouri, F. ; Scharf, B.</creator><creatorcontrib>Nouri, F. ; Scharf, B.</creatorcontrib><description>Polysilicon emitter transistors with interfacial nitride and low emitter resistance have been fabricated reproducibly. The use of a phosphorus emitter has reduced the emitter resistance to a level comparable to that of barrier-free poly emitters. It is shown that the enhanced gain due to the interfacial barrier can be traded off for a reduction in base resistance. The authors have investigated the thermal stability, electrical reliability and noise characteristics of the transistors.&lt; &gt;</description><identifier>ISBN: 0780307275</identifier><identifier>ISBN: 9780780307278</identifier><identifier>DOI: 10.1109/BIPOL.1992.274077</identifier><language>eng</language><publisher>IEEE</publisher><subject>Atomic measurements ; Bipolar transistors ; Electron emission ; Equations ; Implants ; Rapid thermal processing ; Reproducibility of results ; Silicon ; Thermal resistance ; Tunneling</subject><ispartof>Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting, 1992, p.88-91</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/274077$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/274077$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Nouri, F.</creatorcontrib><creatorcontrib>Scharf, B.</creatorcontrib><title>Polysilicon-emitter bipolar transistors with interfacial nitride</title><title>Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting</title><addtitle>BIPOL</addtitle><description>Polysilicon emitter transistors with interfacial nitride and low emitter resistance have been fabricated reproducibly. The use of a phosphorus emitter has reduced the emitter resistance to a level comparable to that of barrier-free poly emitters. It is shown that the enhanced gain due to the interfacial barrier can be traded off for a reduction in base resistance. The authors have investigated the thermal stability, electrical reliability and noise characteristics of the transistors.&lt; &gt;</description><subject>Atomic measurements</subject><subject>Bipolar transistors</subject><subject>Electron emission</subject><subject>Equations</subject><subject>Implants</subject><subject>Rapid thermal processing</subject><subject>Reproducibility of results</subject><subject>Silicon</subject><subject>Thermal resistance</subject><subject>Tunneling</subject><isbn>0780307275</isbn><isbn>9780780307278</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1992</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj81Kw0AURgdEUGsfQFd5gcT5zZ3s1KK1EGgXui4zkzt4JU3KzID07S3Ub3MWBw58jD0I3gjBu6fXzW7bN6LrZCNBc4ArdsfBcsVBgrlhy5x_-HnGWC66W_a8m8dTppHCPNV4oFIwVZ6O8-hSVZKbMuUyp1z9UvmuaDrr6AK5sZqoJBrwnl1HN2Zc_nPBvt7fPlcfdb9db1YvfU0CdKmVENGijAGMNtEBAg_Gi3Zo21Zpj2i5dMKiixoHqaIN3kmENkarwWNQC_Z46RIi7o-JDi6d9peP6g-wjkm1</recordid><startdate>1992</startdate><enddate>1992</enddate><creator>Nouri, F.</creator><creator>Scharf, B.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1992</creationdate><title>Polysilicon-emitter bipolar transistors with interfacial nitride</title><author>Nouri, F. ; Scharf, B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i174t-311f8e2fc7545fa7e70c5b16d66634bee802a18eaf4ed23f8cba2e76ff847bec3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Atomic measurements</topic><topic>Bipolar transistors</topic><topic>Electron emission</topic><topic>Equations</topic><topic>Implants</topic><topic>Rapid thermal processing</topic><topic>Reproducibility of results</topic><topic>Silicon</topic><topic>Thermal resistance</topic><topic>Tunneling</topic><toplevel>online_resources</toplevel><creatorcontrib>Nouri, F.</creatorcontrib><creatorcontrib>Scharf, B.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nouri, F.</au><au>Scharf, B.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Polysilicon-emitter bipolar transistors with interfacial nitride</atitle><btitle>Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting</btitle><stitle>BIPOL</stitle><date>1992</date><risdate>1992</risdate><spage>88</spage><epage>91</epage><pages>88-91</pages><isbn>0780307275</isbn><isbn>9780780307278</isbn><abstract>Polysilicon emitter transistors with interfacial nitride and low emitter resistance have been fabricated reproducibly. The use of a phosphorus emitter has reduced the emitter resistance to a level comparable to that of barrier-free poly emitters. It is shown that the enhanced gain due to the interfacial barrier can be traded off for a reduction in base resistance. The authors have investigated the thermal stability, electrical reliability and noise characteristics of the transistors.&lt; &gt;</abstract><pub>IEEE</pub><doi>10.1109/BIPOL.1992.274077</doi><tpages>4</tpages></addata></record>
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Atomic measurements
Bipolar transistors
Electron emission
Equations
Implants
Rapid thermal processing
Reproducibility of results
Silicon
Thermal resistance
Tunneling
title Polysilicon-emitter bipolar transistors with interfacial nitride
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T07%3A14%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Polysilicon-emitter%20bipolar%20transistors%20with%20interfacial%20nitride&rft.btitle=Proceedings%20of%20the%201992%20Bipolar/BiCMOS%20Circuits%20and%20Technology%20Meeting&rft.au=Nouri,%20F.&rft.date=1992&rft.spage=88&rft.epage=91&rft.pages=88-91&rft.isbn=0780307275&rft.isbn_list=9780780307278&rft_id=info:doi/10.1109/BIPOL.1992.274077&rft_dat=%3Cieee_6IE%3E274077%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=274077&rfr_iscdi=true